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SUMMARYDistributed fiber optic sensors have been shown to be promising when used to monitor the structural health of pipes. The body of work thus far has only considered pipes whose cross sections are assumed to remain circular under load. In some applications, the cross section of the pipe has been known to deform when loaded. Subsequent loading on a deformed pipe then generates additional stresses that may have been unaccounted for when designing the pipe. This paper addresses the effects of the initial non-circular cross section of a pipe under internal pressure and its detection with a distributed fiber optic sensor based on Brillouin Optical Time Domain Analysis. This ability of the Brillouin Optical Time Domain Analysis sensor to detect local stiffness irregularities on an out-of-round pipe subjected to internal pressures is also demonstrated.

This paper reviews the development of the MOS-FET model (Xsim), for unification of various types of MOS devices, such as bulk, partially/fully-depleted SOI, doublegate (DG) FinFETs and gate-all-around (GAA) siliconnanowires (SiNWs), based on the unified regional modeling (URM) approach. The complete scaling of body doping and thickness with seamless transitions from one structure to another is achieved with the unified regional surface potential, in which other effects (such as those due to poly-gate doping and quantum-mechanical) can be incorporated. The unique features of the Xsim model and the essence of the URM approach are described.

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A new definition of MOSFET threshold voltage is proposed, namely, the "critical-current at linear-threshold" method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submicron MOS device characterization and modeling. The proposed method effectively removes ambiguity of de facto industry standard of the constant-current method for MOS threshold voltage.Index Terms-Deep-submicron MOSFET modeling, DIBL, MOS threshold voltage.