On the Compound Semiconductor Devices and CMOS (CoSMOS) program, HRL Laboratories, LLC is developing technology for intimate integration of silicon complementary metal-oxide- semiconductor (CMOS) devices with 400 GHz InP heterogeneous bipolar transistor (HBTs) to form complex integrated circuits. This research is investigating innovative microfabrication approaches, including adhesive bonding techniques, for transistor-scale integration of compound semiconductor and silicon-based transistors. We have successfully fabricated large area HBT's on thin (~1 µm) InP epitaxial layers transferred to silicon substrates with a die to wafer bonding process that preserves the growth orientation of the epitaxial layers bonded to the target substrate.
The potential for InAs-based heterojunction bipolar transistors (HBTs) to be used for high speed, low power applications has been demonstrated.[l] The material properties that give InAs an advantage over InGaAs-based HBTs include a low bandgap, low electron effective mass, high peak velocity and high electron mobility. However, a new technology presents new challenges for process development engineers. In this talk, InAs-based HBT technology will be discussed. Several of the available fabrication processes will be presented as well as the device performance obtained from some of these options.The first major difference between InAs technology and other In-V HBT technologies is the
Future wideband communications, mm-wave digital synthesis, and digital beam-steering will benefit from digital operation at clock frequencies between 50 and 100 GHz at reasonable power levels. HRL has developed InP-based HBT technology that is capable of supporting these needs. We have demonstrated InP HBTs with cutoff frequencies, ft, over 200 GHz and with f max over 300 GHz as well as fully static dividers operating at 72.8 GHz.
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