In order to reduce corrosion on the Cu surface in post-chemical mechanical polishing (CMP) cleaning, controlling the state of inhibitor layers is indispensable. In this study, to investigate the behavior of inhibitor layers in the cleaning process, Cu–benzotriazole (BTA) layers on CuO
X
were analyzed by electrochemical measurements and surface analysis. Electrochemical measurements revealed that Cu(I)–BTA can prevent corrosion more efficiently than Cu(II)–BTA, and surface analysis revealed that the Cu(I)–BTA layer is thin, whereas the Cu(II)–BTA layer is bulky. The Cu(I)–BTA layer is effective in preventing corrosion of the Cu surface.
Co is one of the candidates for a new material in the advanced generation of LSI. However, it is difficult to implement a precise analysis of surface reactions because a Co surface is unstable. In chemical mechanical planarization (CMP) and post-CMP cleaning, many surface reactions are simultaneously induced such as dissolving Co by a chelating agent, adhesion of an inhibitor, and oxidation of a Co surface. Those reactions should be controlled to establish the ideal processes of CMP and post-CMP cleaning. In this work, we performed open circuit potential (OCP) monitoring and succeeded in tracing the complicated reactions. It enabled us to compare the strengths of inhibitors and select appropriate inhibitors in a post-CMP cleaner. The measurement and analysis can be applied to not only post-CMP cleaning but also CMP.
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