The profiles and surface morphologies of etched SiC can be effectively controlled using electron cyclotron resonant plasmas. When high bias (100 V) is applied to the substrate, etching is anisotropic and smooth surfaces result, with the exception of trenches which form at the base of the sidewall features. In contrast, etching at low bias (8 V) is more isotropic with no apparent trenching, but results in textured etched surfaces and jagged sidewall features. However, the etched surfaces and sidewall features can be smoothed by subjecting the samples to a high bias pretreatment prior to etching at lower bias. Etching isotropy is strongly dependent on both the applied bias and the proximity of the sample to the ECR source. A combination of high and low bias etching has been employed for micromachining cantilever structures from single‐crystal SiC.
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