We have demonstrated high-peak-power generation at 1 kW average power by applying an acousto-optic Q switch to a quasi-cw diode-pumped Nd:YAG master oscillator power amplifier. We achieved a maximum peak power of 2.3 MW by driving the Q switch in burst mode. The average repetition rate was 6 kHz. The corresponding beam quality was M2 = 9.
We propose a highly efficient quasi-cw Nd:YAG rod laser with a novel side-pumping design that uses microlens-free diode stacks. We demonstrate 320-W output power with 28% electrical-to-optical efficiency, which is, to our knowledge, the highest efficiency reported for diode-pumped solid-state lasers.
This paper describes the development of an Al-based thin-film gate structure for use in large, high-resolution active-matrix liquid crystal displays (AMLCDs). Aluminum films are suitable for forming the data lines of such displays, but they are not suitable for forming the gate lines because of the hillock-induced shorts that can occur to overlying metal lines during the heating necessary for insulator deposition. Alloying with yttrium, gadolinium, and neodymium was examined with the aim of reducing hillock and whisker formation during such heating. Although Al films alloyed with 2 at.% of those metals exhibited low hillock densities (10-100 mm""^), the densities were not low enough for the fabrication of SXGA (1280 X 1024 pixels) panels. After investigation of several means to further reduce the formation of hillocks and whiskers, the most effective approach was found to be anodization of the Al-alloy gate lines, suitably patterned for anodization, followed by photoresist application and laser-cutting steps. Illustratively, by use of an anodized Al-Nd (2 at.%) thin-film gate structure, the shortcircuit defect rate and contact defect rate for an 11.3-in.-diagonal experimental SVGA (800 X 600 pixels) display could be effectively reduced to zero.
IntroductionThin-film transistors having an inverted structure (gate beneath) have been studied extensively because of their use in active-matrix liquid crystal displays (AMLCDs) [1,2]. In the 1990s, the panel size and resolution of AMLCDs were increased dramatically, and much effort was devoted to developing low-resistivity gate lines [3-6], The aperture of displays with resolutions higher than SXGA has been significantly reduced by the use of gate alloys such as molybdenum-tantalum or molybdenum-tungsten. To achieve this, low-resistivity films are required (see Tabic 1). As shown in Figure L the use of a conventional MoW alloy with a resistivity of 16.5 /liO-cm results in an aperture ratio of less than 30% for a 12-15-in.-diagonal panel. This is unacceptable for a mobile computer display, because a small aperture requires a bright backlight and consumes a large amount of batterj' power. On the other hand, the use of an aluminum alloy film with a resistivity of 6 /j,ft-cm results in an aperture of more than 50% for a
Intensities of x-ray microbeams formed by the 250-mm-long hollow glass pipes of inner diameters of 27.4, 23.0, and 18.8 μm have been theoretically investigated, by taking account of the slope distribution of microprojections (surface roughness) on the pipe inner wall, using the Monte Carlo method. The intensities for all the pipes calculated on the supposition that each pipe inner wall is perfect (i.e., zero rms of the slope distribution) have been much greater than the experimental values in the x-ray energy region from 6.93 to 19.6 keV. Assuming the slope rms from 2.5×10−4 rad to 3.3×10−3 rad, the calculated results have agreed with the experimental values. Discussions on the results for all the pipes are given in relation to the x-ray anomalous dispersion, the penetration of x rays, the intensity distribution on the x-ray sources used, undulation of the pipes, and the presence of microdust in the pipes.
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