To describe complex acid/quencher interaction and their mutual diffusion in imaging with chemically amplified resist films, our acid-quencher mutual diffusion/quenching model is implemented to the fast resist image simulator. Accuracy better than 10-nm was obtained over wide varieties of 0J3-node metal-level pattern features. The model also suggested that diffusion of quencher, as well as that of acid, significantly degrades proximity effects and MEF.
We have developed novel alicyclic polymers having monoacid ester structures by alcoholysis of non-conjugated cyclic diene and malefic anhydride copolymers. This polymer, named ALPHA, exhibited good solubility (10-50 nmisec) in 0.113% aqueous tetramethyl-ammonium hydroxide solution without swelling. Absorbance was around 0.6 pm""' at 193 nm. Dry-etching resistance for C12BC13 gas was the same as that of polyhydroxystyrene. A two-component resist system, consisting of 1-ethoxyethylprotected ALPHA polymer and onium salt, produced 0.20-pm line-and-space patterns using a KrF excimer laser stepper with a phase-shifting mask. Consequently, we believe ALPHA is suitable as a base polymer for ArF excimer laser resists.
Bisazidobiphenyls have been evaluated as photosensitive compounds of negative resists for i-line phase-shifting lithography. The optical parameters of the bisazidobiphenyl resists such as Dill's A, B, and C parameters, molar absorption coefficients, and quantum yields are measured to select an appropriate bisazidobiphenyl for an i-line negative resist. The quantum yields of bisazidobiphenyls strongly depend on the substituents on the aromatic rings and vary between 0.25 and 0.83. The resist sensitivities are proportional to the product of ε and φ, which means the nitrenes produced from each bisazidobiphenyl have the same reactivity with novolak resin. 2,7-Diazidofluorene (azide 6), which has the largest ε·φ, gives the highest sensitivity. However, the resist using a mixture of azide 6 and 4,4'-diazido-3,3'-dimethoxybiphenyl (azide 1) is subjected to lithographic evaluation because azide 6 has low solubility in the casting solvents. The new resist resolves 0.275-µm line-and-space patterns in 1-µm-thick film when it is exposed with an i-line stepper in conjunction with a phase-shifting mask. The required dose of the new resist for imaging is 240 mJ/cm2.
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