Synthesis and Dissolution Characteristics of Novel Alicyclic Polymers with Monoacid Ester Structures.

Abstract

We have developed novel alicyclic polymers having monoacid ester structures by alcoholysis of non-conjugated cyclic diene and malefic anhydride copolymers. This polymer, named ALPHA, exhibited good solubility (10-50 nmisec) in 0.113% aqueous tetramethyl-ammonium hydroxide solution without swelling. Absorbance was around 0.6 pm""' at 193 nm. Dry-etching resistance for C12BC13 gas was the same as that of polyhydroxystyrene. A two-component resist system, consisting of 1-ethoxyethylprotected ALPHA polymer and onium salt, produced 0.20-pm line-and-space patterns using a KrF excimer laser stepper with a phase-shifting mask. Consequently, we believe ALPHA is suitable as a base polymer for ArF excimer laser resists.

Evolution and Progress of Deep UV Resist Materials.

“…The other approach is to incorporate the alicyclic structure in the polymer backbone [94][95][96][97][98], which is believed to provide a greater etch resistance. In this case the polymer preparation method becomes significantly different from the conventional radical polymerization technique that is primarily employed in manufacture of 248 nm resist polymers and 193 nm polymethacrylates.…”

“…In this case the polymer preparation method becomes significantly different from the conventional radical polymerization technique that is primarily employed in manufacture of 248 nm resist polymers and 193 nm polymethacrylates. Alternating radical polymerization with electrondeficient monomers [95][96][97][98][99], ring-opening metathesis polymerization [100], and coordination cationic polymerization [94,100] have been employed in preparation of backbone alicyclic polymers.…”

IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance.

“…During the last few years, researchers in this field have exploited several classes of new polymers for use in 193nm lithography [1][2][3][4][5][6]. These are functionalized poly(acrylates), alternating polymers of cyclicolefin and maleic anhydride, and homopolymers of cyclicolefins.…”

Effect of Comonomer Structure on Dissolution Characteristics: ArF Negative Resist System Using Androsterone Derivative with .DELTA.-Hydroxy Acid.

“…Therefore, the resolution of ArF excimer-laser lithography must be strongly enhanced, for example by using a phase-shifting mask. [ 1,2] In order to make good use of strong resolution enhancement, positive [3][4][5][6][7][8][9][10][11][12][13] and negative [14][15][16][17][18][19][20][21][22][23] high-performance ArF resists are indispensable.…”