The diffusion of Ge in Ge-rich layer (GRL) and the factors affecting on it during the oxidation of strained Si1−xGex layers were examined. Strained Si1−xGex layers, having different initial Ge concentrations (x=0.15 and 0.3), were oxidized at 800 and 900°C in a dry O2 ambient for different oxidation times. The diffusion of Ge into the underlying Si1−xGex layer having an initial constant composition and the resulting transformation to GRL were both enhanced with an increase in oxidation temperature. After complete transformation to GRL, GeO2 started to become incorporated into the resulting oxide layer. The formation of GeO2 was initiated by the Ge saturation of the GRL layer with Ge and by the differences in diffusivity of Ge atoms in Si1−xGex and Si substrate. The relaxation occurred when the Ge concentration in the GRL reached a critical value and was not affected by either oxidation time or temperature.

New donor and oxygen precipitate in CZ-silicon are studied by means of Hall measurement, IR measurement and TEM observation. Two types of defect are observed in specimens annealed at 650-750℃, that is, rod-like defects and plate-like defects. New donor generation is mainly related to the plate-like defects, which are indentified as β-cristobalite according to the H-REM results. It is suggested that the new donor originates from the ionization of dangling bonds of silicon atoms on precipitates/matrix interfaces and is controlled by the neucleation and growth of β-cristobalite precipitates.