Ga2O3 thin films were deposited on (111) Si substrate by pulsed laser deposition method. X-ray photoelectron spectroscopy has been used to determine the valence band offset at Ga2O3/Si heterojunction interface. We measured the binding energies of Si 2p and Ga 2p3/2 core levels and the valence band maxima energies. The valence band offset is determined to be 3.5 ± 0.1 eV. As a consequence a type Ι heterojunction with a conduction band offset of 0.2 ± 0.1 eV is found. The determination of the band alignment of Ga2O3/Si heterojunction facilitates the design of optical and electronic devices based on the Ga2O3/Si structure.
An X-ray metrology tool that has functions of X-ray Reflectometry (XRR), X-ray Fluorescence (XRF) and X-ray Diffraction (XRD) has been developed. Thickness of a film can be determined using XRR, XRF or XRD. The way of choosing a method is discussed. Density is determined using XRR. Composition is determined using XRF. Crystal orientation is determined using XRD. Combined tools are developed to give maximum speed for major applications.
It has been said that Laboratory XAFS measurement takes long time due to weak X-Ray source and that it is not suitable for XANES measurement due to its poor resolution. However, recently, some improvements and developments, i. e. highly brilliant X-Ray source, LaB6 cathode, high speed counting circuit, engineering workstation etc. have been realizing competitive performance and measurement circumstances with SR(Synchrotron Radiation).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.