2013
DOI: 10.1016/j.sab.2013.10.006
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Vapor phase treatment–total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface

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Cited by 9 publications
(7 citation statements)
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“…Additionally information was given on the baking temperature of the droplet which should be less than 50 C for larger than 100 mL droplets which is recommended to achieve a high collection efficiency. A similar technique was described by Takahara et al, 77 vapour phase treatment and its application to TXRF for trace elemental analysis of silicon wafer surface This technique which is under investigation by the ISO/TC201/WG2 to improve the detection limits of TXRF. In Round Robin tests it was shown that the intensity of the signals for an intentionally contaminated wafer with 5 Â 10 9 atoms cm À2 of Fe and 5 Â 10 10 atoms cm À2 of Ni resulted in an intensity enhancement varying greatly (1.2-4.7) among the participating laboratories.…”
Section: Txrf and Related Techniquesmentioning
confidence: 99%
“…Additionally information was given on the baking temperature of the droplet which should be less than 50 C for larger than 100 mL droplets which is recommended to achieve a high collection efficiency. A similar technique was described by Takahara et al, 77 vapour phase treatment and its application to TXRF for trace elemental analysis of silicon wafer surface This technique which is under investigation by the ISO/TC201/WG2 to improve the detection limits of TXRF. In Round Robin tests it was shown that the intensity of the signals for an intentionally contaminated wafer with 5 Â 10 9 atoms cm À2 of Fe and 5 Â 10 10 atoms cm À2 of Ni resulted in an intensity enhancement varying greatly (1.2-4.7) among the participating laboratories.…”
Section: Txrf and Related Techniquesmentioning
confidence: 99%
“…The ISO Technical Committee 201 Working Group 2 has investigated the use of vapour phase treatment to improve LODs in the trace metal analysis of silicon wafers by TXRF spectrometry. 163 It was found via round robin testing that this treatment improved TXRF intensity by 1.2 to 4.7 for samples intentionally contaminated with Fe and Ni at a level of 5 Â 10 9 and 5 Â 10 10 atoms cm À1 respectively. It is well established that TRXRF can be used in combination with a synchrotron radiation source to improve surface sensitivity for trace analysis of semiconductors materials.…”
Section: Semiconductor Materials and Devicesmentioning
confidence: 99%
“…In the former case, TXRF analysis is used for the elemental analysis of contamination on silicon wafers. [1][2][3] In the latter, TXRF is applied for trace elemental analysis of samples including environmental samples such as soil [4][5][6] , seawater [7][8][9] , air particles [10][11][12][13][14][15] , and beverages [16][17][18][19] as well as biological samples such as blood [20][21][22] , urine [23] , and human hair [24] placed on a flat substrate. For example, a small volume of tap water can be dropped on an optically flat substrate, and the dried residue is measured by TXRF.…”
Section: Introductionmentioning
confidence: 99%