A simple mixed source (gallium and indium metals) method was used in a hot-wall epitaxial system to grow InGaN films on
sapphire with thick (∼1.5 µm) and thin (∼3 nm) GaN buffer layers. Indium incorporation was controlled independently by the
substrate temperature, the N2 partial pressure and the mixed source temperature. High-quality InGaN films were obtained,
showing strong near-band-edge emission peaks ranging from 370 to 465 nm and narrow X-ray rocking curve full-width at half
maximum for InGaN (0002) of 7.03 arcmin. Non-resonant Raman shift of InGaN layers was clearly observed for the first
time.
A simple mixed-source (metallic gallium and indium) method has been used successfully in a hot-wall epitaxial system to
grow high-quality InGaN films on sapphire with GaN buffer layers. The InGaN films exhibit sharp and strong near-band-edge-emissions, ranging from violet (384 nm) to blue (448 nm), with photoluminescence (PL) peak widths ranging from 12–33 nm at room temperature. The influence of the mixed-source In/Ga ratio on the In incorporation and crystal quality is
investigated, and it is found that a relatively low In/Ga ratio, 1/4–1/5 in the source or 2–3 in the vapor is desirable for
improving the crystal quality and enhancing In incorporation. The PL spectra are obtained from 10 K to 300 K and the
activation energy, deduced from the thermal quenching of the PL intensity, is about 30.5 meV, suggesting a rather small
compositional fluctuation. PL peaks also exhibit anomalous redshifts (10–70 K) and blue shifts (80–140 K).
Author Abstract: Kanagawa Association of Libraries and Information Bureaus (Japanese abbreviation: Sinshiken) celebrates the 40th anniversary of inauguration this year. Then, as active conduct of business the organization and operation of Sinshiken, the actual result of management, and meeting of the monthly study group, the subcommittees, the publication and network practical use, and the Kanagawa prefectural Kawasaki library which is in the relation of mutual cooperation are described. Such issues of Sinshiken as the significance of a local network, the necessity for the network over various libraries in Sinshiken are also described.
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