High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source

Abstract

A simple mixed source (gallium and indium metals) method was used in a hot-wall epitaxial system to grow InGaN films on sapphire with thick (∼1.5 µm) and thin (∼3 nm) GaN buffer layers. Indium incorporation was controlled independently by the substrate temperature, the N2 partial pressure and the mixed source temperature. High-quality InGaN films were obtained, showing strong near-band-edge emission peaks ranging from 370 to 465 nm and narrow X-ray rocking curve full-width at half maximum for InGaN (0002) of 7.03 arcmin. Non-resonant Raman shift of InGaN layers was clearly observed for the first time.

Observation of Phonon Modes in Bulk InGaN Films by Raman Scattering

“…Since details of the growth process were described elsewhere [4,5], only the key point is repeated here: On the top of a hot wall furnace, the sapphire substrate was first covered by a thin Ga metallic layer at low temperature, then nitrided by NH 3 to form a thin (3 nm) GaN buffer layer. The substrate was then moved to another furnace including a mixture of Ga/In metals.…”

Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers

“…To solve this issue, the use of InGaN substrates has been proposed as a means to reduce lattice mismatch induced piezoelectric electric field intensity in the QW [27][28][29][30]. Growth of thick InGaN layers on sapphire and GaN substrates has been well-demonstrated [31][32][33][34][35][36][37][38][39], with these thick InGaN layers serving as growth templates for InGaN LED epi-stacks. However, InGaN QBs must be used in these structures, and suffer from low carrier injection efficiency due to reduced QB height.…”

Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source

“…[12][13][14][15] Recently, the growth technique of high quality InGaN using a mixed metallic Ga and In source was established in a HWE system. 14,15 The advantage of the mixed source lies in its ability to supply a more uniform and stable vapor mixture of Ga and In for the growth of high quality mixed crystals. In incorporation in the InGaN film can be controlled independently by adjustments of the substrate temperature, the mixed source temperature, and the In composition of the mixed source.…”

“…Before the growth of InGaN, a GaN layer of 1.5 m thickness is grown on ͑0001͒ sapphire ͑c face͒ at a͒ a substrate temperature (T sub ) about 1000°C above HW II. [13][14][15] An InGaN film of 80 nm thickness is then grown on the GaN film above HW III. Ga and In are mixed in the same source as HW III with a Ga:In more ratio of 3:1.…”