Polycrystalline boron nitride (BN) films are synthesized using BCl3 and N2 as source gases, by plasma-assisted chemical vapor deposition. BN films consist of nanocrystalline grains of 3 nm in size. The energy gap is estimated to be 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is also estimated to be 2×1011 and 4.9×102 Ω· cm for undoped and sulfur (S)-doped BN films, respectively. Electron field emission is observed from S-doped BN film deposited on the Si substrate. The emission current is detected at electric fields higher than 9 V/µ m. The emission current of 10 µ A is obtained at 21 V/µ m. This field emission characteristic is compared with that of polycrystalline diamond films treated with H2 plasma.
Electron emission characteristics of sulfur (S)-doped boron nitride (BN) films synthesized by plasma-assisted chemical vapor deposition (PACVD) are investigated. The BN film consists of hexagonal grains of 3 nm in size. The energy gap is estimated to be as wide as 6.0 eV from ultraviolet-visible optical transmission measurement. The electrical resistivity is reduced to 4.9×102 Ω cm. Si tip field emitters coated with the BN film are fabricated. The electron emission occurs at an electric field as low as 6 V/μm, while a high electric field of 20 V/μm is needed to emit electrons from the Si tip array without BN coating. It is deduced that the tunneling barrier height of 0.1 eV exists at the surface of the BN film.
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