Electron emission from nanocrystalline boron nitride films synthesized by plasma-assisted chemical vapor deposition

Sugino, Takashi; Tanioka, Kazuhiko; Kawasaki, Seiji; Shirafuji, Junji

doi:10.1016/s0925-9635(97)00289-6

Cited by 22 publications

(5 citation statements)

References 14 publications

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“…[9][10][11][12][13] To achieve n-type doping in c-BN films some attempts have been devoted to the incorporation of S, C, and Si. The addition of S resulted in n-type conductivity and eight orders of magnitude decrease in resistivity, 14 whereas only a few results have been published concerning about the efficacy of C as a n-type dopant. 15 Through theoretical calculations elemental Si has been revealed as another candidate for achieving n-type doping and has been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Jiang

Zhang

Yin

et al. 2011

Journal of Applied Physics

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Si-doped cubic boron nitride (c-BN) films with various Si concentrations were achieved by in situ cosputtering during ion beam assisted deposition. Effects of the Si concentration and rapid thermal annealing (RTA) conditions on the electrical transport properties of Si-doped c-BN thin films were investigated systematically. The results suggest that the optimum RTA condition is at the temperature of 1000 °C for 3 min. The resistance of Si-doped c-BN films gradually decreases as the Si concentration increases, indicating an electrical doping effect of the Si impurity. The temperature dependent electrical conductivity of the Si-doped c-BN films suggests that different conduction mechanisms are dominant over the different temperature ranges. Based on the Davis–Mott model, we propose that the extended-state conduction, band tail-state conduction and short-range hopping conduction are responsible for the respective temperature ranges. In addition, the reduction in activation energy of Si impurities is observed as the Si concentration increases.

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Section: Introductionmentioning

confidence: 99%

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Jiang

Zhang

Yin

et al. 2011

Journal of Applied Physics

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“…It has similar crystal structure as that of graphite [2]. This crystal structure provides it's extraordinary mechanical, thermal [3], shock resistance [4], electrical [5], thermal [6], optical [7], and chemical properties, which may find significant potential applications in refractories [8], lubricants [9], laser devices [10], electrical insulators [11], and catalyst supports [12]. Moreover, these advantages above assumed to be inherited on the nanoscale level, and thus h-BN nanomaterials are very promising for applications involving their use under hard conditions [13].…”

Section: Introductionmentioning

confidence: 95%

A Facile Reaction for the Preparation of BN Nanospheres

Wang

2010

AMR

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“…It has high thermal conductivity and optical transmittance, a wide energy band gap and good chemical and mechanical resistance, making it an attractive material for thin-film applications [8][9][10][11][12]. In addition, it can be deposited by doping with different materials such as beryllium, oxygen, carbon, fluorine, silicon, sulfur or titanium [13][14][15][16]. On the other hand, hexagonal boron nitride (h-BN) is a softer material.…”

Section: Introductionmentioning

confidence: 99%

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

et al. 2007

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Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75°. The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin.

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Electron emission from nanocrystalline boron nitride films synthesized by plasma-assisted chemical vapor deposition

Cited by 22 publications

References 14 publications

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

A Facile Reaction for the Preparation of BN Nanospheres

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

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