No abstract

No abstract

We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range. SummeryThe Si pin PDs at the short-reach multimode datacom wavelengths of 840-860 nm and at a short wavelength division multiplexing (SWDM) band of 850-950 nm could facilitate the integration [1] and reduce the cost. Our recent study [2] showed experimentally that a microstructure can increase the Si PDs quantum efficiency (QE) so that less than 2 micron intrinsic (i) layer can show the QE>50% with data rate 20 Gb/s for wavelength 800-950nm . In this study we analyze the modes in the structure numerically in order to optimize shape and size of the holes for better QE.

No abstract

No abstract