Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

Gao, Yang; Cansizoglu, Hilal; Polat, Kazim G.; Ghandiparsi, Soroush; Kaya, A.; Mamtaz, Hasina H.; Mayet, Ahmed S.; Wang, Yinan; Zhang, Xinzhi; Yamada, Toshio; Devine, Ekaterina Ponizovskaya; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

doi:10.1038/nphoton.2017.37

Cited by 191 publications

(151 citation statements)

References 46 publications

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“…In this regards, Si is an excellent photodetector in the 850 nm band with higher responsivity than III-V photodetector. However, longer absorption length, RC time, and transit time in Si considerably limit bandwidth [9][10][11]. The bandwidth limitation of Si photodetector is significantly improved by realizing lateral pin photodetector in a guided wave configuration, particularly in a Silicon-on-Insulator (SOI) platform [12].…”

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confidence: 99%

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

et al. 2019

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We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.Ever increasing data traffic drives the need for scalable, high speed, and energy efficient connectivity in the datacenters [1-3]. Optical connectivity offers an excellent solution to data connectivity bottleneck in datacenters. Widely used 850 nm VCSEL based Multimode fiber (MMF) technology is reaching maximum capacity, however, proposal to extend the MMF toward Wavelength Division Multiplexing (WDM) would scale up the capacity to 400 Gbps. In view of that, IEEE proposed 400 Gbps roadmap [4] for short reach rack-to-rack communication by 2020. Adapting WDM would require integration of wavelength multiplexers and demultiplexers, light sources and detectors in a single module. Integrating all the functional elements as a single photonic integrated circuit would enable a compact, costeffective, and scalable platform. Fig. 1. Schematics of the proposed waveguide coupled Si photodetector. (a) SiN waveguide on SiO2, (b) Tapered Si waveguide vertically coupled to SiN, and (c) Si pin photodetector with SiN waveguide.It is essential that the circuit should be able to guide light with low-loss and is compact with the integration of light sources and detectors. Silicon (Si) photonics has demonstrated such a versatile platform in 1310 nm and 1550 nm wavelength band [5][6][7]. A similar strategy could enable a photonic circuit platform in 850 nm band as well. Recently, efforts are made to integrate III-V light sources and III-V/Graphene photodetectors on Silicon Nitride (SiN) waveguide platform [7,8]. However, such hybrid integration requires complex assembly and post-processing technology, also the fabrication is not compatible with preferred Si process technology. It is desirable to reduce such non-standard integration. In this regards, Si is an excellent photodetector in the 850 nm band with higher responsivity than III-V photodetector. However, longer absorption length, RC time, and transit time in Si considerably limit bandwidth [9][10][11]. The bandwidth limitation of Si photodetector is significantly improved by realizing lateral pin photodetector in a guided wave configuration, particularly in a Silicon-on-Insulator (SOI) platform [12]. The thin Si in SOI has smaller depletion capacitance, which enhances the RC time limited bandwidth....

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High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

et al. 2019

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“…The Si MSM photodetectors (PDs) at the short-reach multimode datacom wavelengths of 840-860 nm and at a short wavelength division multiplexing (SWDM) band of 850-950 nm could facilitate the integration [1] and reduce the cost. Our study [2,3] showed theoretically and experimentally that a nano-or micro-structure can increase the Si PDs quantum efficiency (QE) for pin diodes so that less than 2 microns intrinsic (i) layer can show the QE>50% with data rate 20 Gb/s for wavelength 800-950nm. In this study we use nanoholes to reduce the reflection and increase QE in MSM PDs.…”

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confidence: 87%

Enhanced Quantum Efficiency and Reduction of Reflection for MSM Photodetectors with Nano-Structured Surface

Devine

Yamada²,

Cansizoglu

et al. 2018

2018 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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“…The Si pin PDs at the short-reach multimode datacom wavelengths of 840-860 nm and at a short wavelength division multiplexing (SWDM) band of 850-950 nm could facilitate the integration [1] and reduce the cost. Our recent study [2] showed experimentally that a microstructure can increase the Si PDs quantum efficiency (QE) so that less than 2 micron intrinsic (i) layer can show the QE>50% with data rate 20 Gb/s for wavelength 800-950nm . In this study we analyze the modes in the structure numerically in order to optimize shape and size of the holes for better QE.…”

Section: Summerymentioning

confidence: 99%

Optimization of light trapping micro-hole structure for high-speed high-efficiency silicon photodiodes

Devine

Cansizoglu

Gao

et al. 2017

2017 IEEE Photonics Conference (IPC)

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We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum efficiency in a wide wavelength range. SummeryThe Si pin PDs at the short-reach multimode datacom wavelengths of 840-860 nm and at a short wavelength division multiplexing (SWDM) band of 850-950 nm could facilitate the integration [1] and reduce the cost. Our recent study [2] showed experimentally that a microstructure can increase the Si PDs quantum efficiency (QE) so that less than 2 micron intrinsic (i) layer can show the QE>50% with data rate 20 Gb/s for wavelength 800-950nm . In this study we analyze the modes in the structure numerically in order to optimize shape and size of the holes for better QE.

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Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

Cited by 191 publications

References 46 publications

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

Enhanced Quantum Efficiency and Reduction of Reflection for MSM Photodetectors with Nano-Structured Surface

Optimization of light trapping micro-hole structure for high-speed high-efficiency silicon photodiodes

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