β-Ga 2 O 3 is one of the most promising wide-bandgap materials for optoelectronic applications as well as a conducting substrate for GaN-based device technologies. Single crystals of undoped β-Ga 2 O 3 are grown by the optical floating zone technique utilizing compressed dry air as growth atmosphere. The properties of β-Ga 2 O 3 are highly anisotropic. Optimization of the processing recipe for wafers along different orientations suitable for device development is conducted. Structural, optical, and electrical properties of the wafers are determined. Efforts are made to fabricate Schottky diodes based on Pt/Ti/Au-β-Ga 2 O 3 -Ti/Au device structures. Devices are fabricated on (À201) cut wafers. The device characteristics are discussed in detail.
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