Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga<sub>2</sub>O<sub>3</sub> Grown by the Optical Floating Zone Technique

Dhanabalan, Dhandapani; Vijayan, Ananthu; Akshita, Kaza Venkata; Bhattacharya, S. S.; Varadarajan, E.; Ganesamoorthy, S.; Sridharan, Moorthy Babu; Natarajan, V.; Verma, Sudeep; Srivatsava, Meenakshi; Lourdudoss, Sebastian

doi:10.1002/pssb.202100496

Cited by 8 publications

(6 citation statements)

References 26 publications

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“…Optimization of the recipe for specific orientation will yield relatively defect free surfaces. 34 changes in the surface roughness will affect the transparency of the wafers by creating more scattering points. This may be a reason for the decrease in the transmittance with the increase in Sn content.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Sn Incorporation in β-Ga₂O₃ Single Crystals and its Effect on Structural and Optical Properties

Vijayan

Dhanabalan

K.V.

et al. 2022

ECS J. Solid State Sci. Technol.

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Undoped and Sn-doped β-Ga2O3 single crystals were grown by optical floating zone technique by varying the doping concentration of Sn from 0.05 wt % to 0.2 wt %. Uniform distribution of the dopant ions was achieved by heat treatment. The crystalline quality and the expansion of the lattice were observed from the PXRD. Raman spectra reveals the incorporation of Sn atoms into the lattice by replacing Ga in the octahedral site. The interplanar distance (d) was calculated as 2.39 Å from the HR-TEM micrographs. The transmittance was found to be decreasing from 80% to 78% as the concentration of Sn increases. The absorption spectra shows a cut off edge around 260 nm for undoped and 270 nm for all Sn doped samples. The bandgap obtained for undoped β-Ga2O3 was 4.36 eV. The doping of 0.05 wt% of Sn decrease the value of bandgap to 4.08 eV, but, for 0.1 wt% and 0.2 wt% Sn an increase in the bandgap value of 4.13 eV and 4.20 eV was observed respectively. The refractive index was found to be 1.96 at 500 nm wavelength. The increase in Sn concentration results in increase of the roughness from 1.116 nm to 3.511 nm.

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Section: Resultsmentioning

confidence: 99%

Investigation of Sn Incorporation in β-Ga₂O₃ Single Crystals and its Effect on Structural and Optical Properties

Vijayan

Dhanabalan

K.V.

et al. 2022

ECS J. Solid State Sci. Technol.

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“…Since the 1950s, there have been various techniques employed for the growth of bulk beta phase gallium oxide. Some of the reported techniques include the floating zone method (FZ) [2,[65][66][67], the Czochralski method (CZ) [68][69][70], the Verneuil method [71,72], the edge-defined film fed growth method (EFG) [2,73,74] and the vertical Bridgman method [73,75,76]. These methods over time have been able to produce bulk β-Ga 2 O 3 crystals in various crystallographic directions: (100), (010) and (001).…”

Section: Synthesis Of Ga 2 Omentioning

confidence: 99%

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Jamwal

Kiani

2022

Nanomaterials

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Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to β-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga2O3 nanostructures are discussed.

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“…The OFZ technique is one of the best-suited techniques as this process does not use any crucible, and no contamination occurs during growth. Other advantages include a controlled atmosphere and conditions allowing for more stable, faster, and homogeneous crystal growth [7,8].…”

Section: Introductionmentioning

confidence: 99%

Study of optical float-zone grown gallium oxide Schottky barrier diode

Sahoo,

Vijayakumar,

Saquib

et al. 2024

Semicond. Sci. Technol.

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β−Ga2O3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β−Ga2O3 sample is grown by the optical float-zone (OFZ) technique. The effect of trenches, which are used for mesa isolation, on breakdown voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistances are extracted, and their dependency on temperature is established. Modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission (TE) model, Poole-Frenkel (PF) emission model, and Fowler-Nordheim (FN) tunneling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV/cm is achieved.

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Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga₂O₃ Grown by the Optical Floating Zone Technique

Cited by 8 publications

References 26 publications

Investigation of Sn Incorporation in β-Ga₂O₃ Single Crystals and its Effect on Structural and Optical Properties

Investigation of Sn Incorporation in β-Ga₂O₃ Single Crystals and its Effect on Structural and Optical Properties

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Study of optical float-zone grown gallium oxide Schottky barrier diode

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Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga2O3 Grown by the Optical Floating Zone Technique

Cited by 8 publications

References 26 publications

Investigation of Sn Incorporation in β-Ga2O3 Single Crystals and its Effect on Structural and Optical Properties

Investigation of Sn Incorporation in β-Ga2O3 Single Crystals and its Effect on Structural and Optical Properties

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Study of optical float-zone grown gallium oxide Schottky barrier diode

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Product

Resources

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Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga₂O₃ Grown by the Optical Floating Zone Technique

Investigation of Sn Incorporation in β-Ga₂O₃ Single Crystals and its Effect on Structural and Optical Properties

Investigation of Sn Incorporation in β-Ga₂O₃ Single Crystals and its Effect on Structural and Optical Properties