Using Pt(3)Fe nanoparticles as an example, a surfactant-free Np-KCl matrix method (Np stands for nanoparticle) is developed for the synthesis of nanoparticles with controlled size and structure. In this method, the Np-KCl assembly is formed in a one-pot reduction in THF at room temperature. KCl is an insoluble byproduct of the reaction and serves as a matrix that traps the nanoparticles to avoid particle agglomeration and to control the coalescence of nanoparticles during thermal annealing up to 600 °C. By varying the molar ratio of metal precursors and KCl, as well as the time and temperature of annealing, the final particle sizes and crystalline order can be independently controlled. After thermal processing, nanoparticles were released from the KCl matrix and transferred in an ethylene glycol-water solution to support materials forming a uniform Np-support assembly. A detailed study of the synthesis of ordered intermetallic Pt(3)Fe nanoparticles with an average diameter of 4 nm, using this Np-KCl method, is provided as an example of a generally applicable method. This surfactant-free strategy has been extended to the synthesis of other bi- and trimetallic nanoparticles of Pt-transition metals.

Thermal annealing is essential for achieving ultrasmall size ferromagnetic properties in next-generation high performance nanocomposite magnetic materials. However, during the annealing process, growth and agglomeration of nanoparticles normally occurs, which destroys the narrow size distributions. Thus, the materials become less suitable for application in high-density magnetic recording. The mechanism of nanoparticle growth and sintering has been difficult to determine because of the lack of suitable in situ tools to probe subnanometer changes at the local level. Here we report a study using high-resolution scanning transmission electron microscopy (STEM) coupled with an in situ thermal annealing stage of surfactant-free, monodispersed superparamagnetic PtFe (cubic) alloy nanoparticles (≈2 nm in diameter) stabilized in or on a KCl matrix. Ex situ experiments confirmed that annealing produces PtFe (tetragonal) ordered intermetallic nanoparticles with a mean diameter of 5 nm, and the in situ study revealed that the mechanism of nanoparticle growth is dominated by particle–particle coalescence, although Ostwald ripening is also implicated in a few regions. In addition, to determine the time dependent evolution of the size distribution of an ensemble of over 400 nanoparticles, analysis of the in situ data also allows tracking of individual nanoparticles, distinguishing coalescence from Ostwald ripening, nanoparticle by nanoparticle. This approach has provided valuable insights into changes in crystal structure and sintering that occur during the thermal annealing of Pt–Fe nanoparticles.

The reduction of Ge halides in oleylamine (OAm) provides a simple, yet effective high-yield synthetic route to germanium nanocrystals (NCs). Significant advances based on this approach include size control of Ge NCs, Bi doping of Ge NCs, and synthesis of Ge1–x Sn x alloys. It has been shown that the size of Ge NCs can be controlled by the ratio of Ge2+/Ge4+ in the reaction. Here, we show that finer control of absolute size and crystallinity can be achieved by the addition of molecular iodine (I2) and bromine (Br2) to germanium­(II) iodide (GeI2). We also show the presence of a Ge–amine–iodide complex and production of hydrogen and ammonia gases as side products of the reduction reaction. All reactions were carried out by microwave-assisted heating at 250 °C for 30 min. I2 and Br2 are shown to oxidize GeI2 to GeI4 in situ, providing good control over size and crystallinity. The kinetics of Br2 oxidation of GeI2 is slightly different, but both I2 and Br2 provide size control of the Ge NCs. The samples are highly crystalline as indicated by powder X-ray diffraction, selected area electron diffraction, transmission electron microscopy and Raman spectroscopy. Although both I2 and Br2 improve the crystallinity of the Ge NCs, I2 provides overall higher crystallinity in the NCs compared to Br2. Absorption (UV–vis–NIR) spectroscopy is consistent with quantum confinement for Ge NCs. The solutions of I2, GeI2, and colloidal Ge NCs were investigated with Fourier transform infrared and 1H NMR spectroscopies and showed no evidence for imine or nitrile formation. The hydrogen on the amine in OAm is shifted downfield with increasing amounts of I2, consistent with a more acidic ammonium species. Hydrogen and ammonia gases were detected after the reaction by gas chromatography and high-resolution mass spectrometry. The presence of a Ge–amine–iodide complex was also confirmed with no evidence for a hydrazine-like species. These results provide an efficient fine-tuning of size and crystallinity of Ge NCs using halogens in addition to the mixed-valence precursor synthetic protocol previously reported and demonstrate the formation of hydrogen as a reducing agent in OAm.

The numerous electronic and optoelectronic applications that rely on semiconductors require tuning their properties through doping. Germanium quantum dots (Ge QDs) were successfully doped with bismuth up to 1.5 mol %, which is not achievable in the bulk Ge system. The structures of oleylamine-and dodecanethiol-capped Ge QDs were probed with EXAFS, and the results are consistent with Bi dopants occupying surface lattice sites. Increasing the amount of Bi dopant from 0.50 to 1.5 mol % results in increasing disorder. In particular, the nearestneighbor Bi−Ge bond length is much longer than the Ge−Ge bond length in Ge QDs. Oleylamine to dodecanethiol ligand exchange was shown to partially restore order in doped QDs. Transport measurements of the Bidoped Ge QD thin films revealed that Bi doping leads to a significant increase in dark current and photocurrent. These results indicate that doping can provide a pathway for improving the performance of group IV quantum dots for energy conversion applications including photodiodes and photovoltaic cells.

Doped and alloyed germanium nanocrystals (Ge NCs) are potential candidates for a variety of applications such as photovoltaics and near IR detectors. Recently, bismuth (Bi) as an n-type group 15 element was shown to be successfully and kinetically doped into Ge NCs through a microwave-assisted solution-based synthesis, although Bi is thermodynamically insoluble in bulk crystalline Ge. To expand the composition manipulation of Ge NCs, another more common n-type group 15 element for semiconductors, antimony (Sb), is investigated. Oleylamine (OAm)- and OAm/trioctylphosphine (TOP)-capped Sb-doped Ge NCs have been synthesized by the microwave-assisted solution reaction of GeI2 with SbI3. Passivating the Ge surface with a binary ligand system of OAm/TOP results in formation of consistently larger NCs compared to OAm alone. The TOP coordination on the Ge surface is confirmed by 31P NMR and SEM-EDS. The lattice parameter of Ge NCs increases with increasing Sb concentration (0.00–2.0 mol %), consistent with incorporation of Sb. An increase in the NC diameter with higher content of SbI3 in the reaction is shown by TEM. XPS and EDS confirm the presence of Sb before and after removal of surface ligands with hydrazine and recapping the Ge NC surface with dodecanethiol (DDT). EXAFS analysis suggests that Sb resides within the NCs on highly distorted sites next to a Ge vacancy as well as on the crystallite surface. High Urbach energies obtained from photothermal deflection spectroscopy (PDS) of the films prepared from pristine Ge NC and Sb-doped Ge NCs indicate high levels of disorder, in agreement with EXAFS data. Electrical measurements on TiO2–NC electron- and hole-only devices show an increase in hole conduction, suggesting that the Sb-vacancy defects are behaving as a p-type dopant in the Ge NCs, consistent with the vacancy model derived from the EXAFS results.