After defining certain sign conventions for sliding velocity and shear force for a PVA brush scrubbing process, a simple kinematics model is used to calculate net sliding velocities in the brush-wafer contact region. Next, a series of experiments are performed where brush velocity is gradually increased while the wafer is kept stationery, and repeated again with the wafer rotating at a certain velocity. For a stationary wafer, with increasing brush velocity, partial lubrication takes effect which results in less brush asperity contact (i.e. a reduction in SF). For a rotating wafer, SF decreases significantly. We attribute this to the net negative sliding velocity across the wafer that partially offsets the positive SF values. However, SF rises with brush velocity which is likely due to fluid distribution effects and increased brush asperity-wafer contact.
As feature sizes continue to shrink well beyond the 7 nm node, understanding the delicate balance present in the chemical mechanical planarization (CMP) process is of utmost importance. In order to achieve high through-put and defect-free CMP processes it is critical to develop predictive analytical techniques that directly correlate to macroscopic STI CMP performance metrics (i.e. oxide/nitride removal, defectivity, and dishing/erosion). This work employed a suite of techniques to monitor the CeO2 nanoparticle interfacial redox processes in the presence of structurally diverse rate modulating additives. Specifically, utilizing a UV–vis spectroscopic technique, the Ce3+/Ce4+ ratio in the presence of different slurry additives was monitored and proved to directly correlate to removal rate performance (i.e. an increase in Ce3+/Ce4+ ratio shows an increase in rate). This finding coupled with the rate of dissolved O2 evacuation and a modified QCM technique determined the mode of interaction/adsorption which validates that the mechanism of oxide removal does not strictly depend on redox capacity, but also depends on the dynamic O2 equilibrium at the CeO2 nanoparticle surface. It was determined that the modulation of oxide removal was directly related to the distribution of interactions (i.e. steric vs redox) and was highly dependent on the slurry additive functionality.
With the rapid miniaturization of advanced technologies, limiting device defects has become of utmost importance in maintaining high performing integrated circuits. Shallow trench isolation (STI) chemical mechanical planarization (CMP) uses a synergistic balance of ceria (CeO2) nanoparticles and functional chemistry to modulate surface adsorption interactions necessary to remove excess topography. This work aims to develop a post-CMP cleaning chemistry that enhances nanoparticle removal via “soft” encapsulation by employing a polyelectrolyte/surfactant (PES) matrix. A surface adsorbing/charge flipping encapsulation process is proposed as a vehicle to remove slurry contamination at low friction. Investigation into the synergy between slurry chemistry and PES cleaning chemistry, with respect to defect aggregate formation, was correlated to the cleaning efficiency as well as friction. Using a suite of techniques to study the real-time defect aggregate formation mechanism it was determined that the supramolecular structure is critical to balance defect forming events with enhanced cleaning efficiency.
Due to the emergence of sub-7 nm technologies, next generation CMP slurry formulations have continued to increase in additive (nanoparticle and chemistry) complexity to meet stringent device specifications. Therefore, it is essential to probe the molecular level interactions at the nanoparticle/slurry chemistry/substrate interface and in turn correlate them to key performance metrics such as removal rate, post CMP defects, and planarization efficiency. This work will address key interactions through a series of case studies focusing on the role of supramolecular structure and cleaning method (i.e. contact vs. non-contact) during STI post-CMP cleaning, probing the impact of supramolecular structure and mode of cleaning relevant to Cu post-CMP, and development of a biomimetic matrix with chemical activity to act as a brush in STI post-CMP cleaning processes. Results show in both BEOL and FEOL post-CMP cleaning there is a strong correlation to the delivery and “soft” nature of the chemistry to allow for effective particle removal at low mechanical force and prevent further defect formation. Furthermore, this work shows a clear correlation between supramolecular structure and particle removal efficiency under both contact and non-contact post-CMP processes.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.