Contact Vs. Non-Contact Cleaning: Correlating Interfacial Reaction Mechanisms to Processing Methodologies for Enhanced FEOL/BEOL Post-CMP Cleaning

Wortman-Otto, Katherine M.; Linhart, Abigail N.; Mikos, Allie M.; Cahue, Kiana A.; Keleher, Jason J.

doi:10.4028/www.scientific.net/ssp.314.237

Cited by 5 publications

(5 citation statements)

References 22 publications

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“…In previous work, the use of megasonic cleaning coupled with supramolecular structures has been reported as an effective way remove CeO 2 from TEOS surfaces at significantly reduced shear force (20). This case study evaluates the megasonic processing condition (i.e., pulsed wave) to assess the cleaning efficiency in a system with increased cavitation compared to a constant megasonic wave.…”

Section: Resultsmentioning

confidence: 99%

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

et al. 2022

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The Chemical Mechanical Planarization (CMP) process can cause various defects, and they can be classified as mechanical (i.e., scratching), chemical (i.e., corrosion), or physiochemical (i.e., adsorbed contaminants) according to the mechanism of formation. Traditionally, a contact cleaning method involving a poly-vinyl alcohol (PVA) brush is used to transfer cleaning chemistry to the substrate of interest as well as provide the necessary mechanical energy for defect removal. While this process is effective in contaminant removal its reliance on shear forces can induce secondary defect modes, such as scratching. To minimize the aforementioned induced defectivity during contact p-CMP processes, the implementation of non-contact modalities has become of the utmost importance. This work will focus on the rationale design of p-CMP cleaning systems for emerging materials such as SiC, carbon-doped oxides, and metals. “Soft” cleaning chemistry structure (i.e., shape and charge), and processes play a critical role in cleaning efficacy under low stress conditions.

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Section: Resultsmentioning

confidence: 99%

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

et al. 2022

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“…To achieve better cleaning performance, different types of physical cleaning methods (of contact and non-contact types) are applied in the post-CMP cleaning. One promising candidate of non-contact cleaning methods is based on megasonic water flow of nozzle injection type [1]; recent studies suggest that cavitation bubbles in water flow under megasonic wave irradiation play a key role in particle removal [2,3,4]. However, megasonic cleaning with acoustic cavitation is known to have a side effect, giving rise to surface damage due to violent bubble collapse.…”

Section: Introductionmentioning

confidence: 99%

Parametric Studies on Particle Removal and Erosion in Nozzle Injection Megasonic Cleaning

Ishibashi

Matsuo

Watanabe

et al. 2023

SSP

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The process of quickly removing abrasive particles of silica and ceria slurries is important in the use of CMP equipment. Megasonic cleaning of nozzle injection type is one of a variety of post-CMP cleaning methods and its performance including cleaning efficiency and erosion was explored experimentally with parametric studies. In the cleaning process, it is favorable to achieve both high efficiency and low damage. The cleaning efficiency was defined by particle removal efficiency (PRE) with a glass sample spin-coated with small silica particles; the damage was detected from mass loss of aluminum foils after the cleaning. The cleaning tests show that the performance of nozzle injection megasonic cleaning depends significantly on ultrasound frequency and water temperature. Toward more efficient and less erosive cleaning, the nozzle injection angle is also expected to play a key role.

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“…Previous work has shown that the shape and charge of the supramolecular structure play a crucial role in effective CeO 2 nanoparticle removal. 19 − 21 More specifically, upon delivery to the wafer surface, micelles recover at a slower rate than polyelectrolytes. Though these additives do reduce the overall shear force and help to minimize defectivity induced during the cleaning process, it is not perfect and can cause p-CMP defects from the contact modality.…”

Section: Introductionmentioning

confidence: 99%

“…While this has shown to be an effective mode of particle removal, there is an increase in the process shear force (mechanical component), which results in secondary defect formation (i.e., increased scratching/surface roughness). , More recently attention has shifted to developing p-CMP cleaning formulations that employ encapsulation of the CeO 2 nanoparticle using supramolecular chemistries (i.e., surfactants, polyelectrolytes, liposomes, etc.). Previous work has shown that the shape and charge of the supramolecular structure play a crucial role in effective CeO 2 nanoparticle removal. − More specifically, upon delivery to the wafer surface, micelles recover at a slower rate than polyelectrolytes. Though these additives do reduce the overall shear force and help to minimize defectivity induced during the cleaning process, it is not perfect and can cause p-CMP defects from the contact modality.…”

Section: Introductionmentioning

confidence: 99%

Coupling Supramolecular Assemblies and Reactive Oxygen Species (ROS) with Megasonic Action for Applications in Shallow Trench Isolation (STI) Post-Chemical Mechanical Planarization (p-CMP) Cleaning

Wortman-Otto

Watson²,

Dussault³

et al. 2022

ACS Omega

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Due to the continued miniaturization of semiconductor devices, slurry formulations utilized in the chemical mechanical planarization (CMP) process have become increasingly complex to meet stringent manufacturing specifications. Traditionally, in shallow trench isolation (STI), CMP, a contact cleaning method involving a poly(vinyl alcohol) (PVA) brush, is used to effectively transfer cleaning chemistry to the oxide substrate. This PVA brush can cause nonuniform cleaning chemistry transport, increased interfacial shear force, and cleaning-induced defectivity from brush loading. Previous work with traditional cleaning processes has shown that using “soft” supramolecular cleaning chemistries has dramatically improved cleaning efficacy while also minimizing the number of induced p-CMP defects. To minimize these effects, noncontact cleaning via the implementation of megasonic action has gained attention. This work employs “soft” cleaning chemistries with Cu 2+ –amino acid complexes, which can catalyze the formation of critical reactive oxygen species (ROS), and evaluates the p-CMP performance under megasonic action. Results from a second-order kinetic model indicate that megasonic conditions (i.e., time and power), “soft” cleaning chemistry structure (i.e., shape and charge), and the generation of ROS all play a critical role in cleaning efficacy under low shear stress conditions.

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Contact Vs. Non-Contact Cleaning: Correlating Interfacial Reaction Mechanisms to Processing Methodologies for Enhanced FEOL/BEOL Post-CMP Cleaning

Cited by 5 publications

References 22 publications

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

Parametric Studies on Particle Removal and Erosion in Nozzle Injection Megasonic Cleaning

Coupling Supramolecular Assemblies and Reactive Oxygen Species (ROS) with Megasonic Action for Applications in Shallow Trench Isolation (STI) Post-Chemical Mechanical Planarization (p-CMP) Cleaning

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