The use of molecular spin state as a quantum of information for storage, sensing and computing has generated considerable interest in the context of next-generation data storage and communication devices 1, 2 , opening avenues for developing multifunctional molecular spintronics 3 . Such ideas have been researched extensively, using singlemolecule magnets 4, 5 and molecules with a metal ion 6 or nitrogen vacancy 7 as localized spin-carrying centres for storage and for realizing logic operations 8 . However, the electronic coupling between the spin centres of these molecules is rather weak, which makes construction of quantum memory registers a challenging task 9 . In this regard, delocalized carbon-based radical species with unpaired spin, such as phenalenyl 10 , have shown promise. These phenalenyl moieties, which can be regarded as graphene fragments, are formed by the fusion of three benzene rings and belong to the class of open-shell systems. The spin structure of these molecules responds to external stimuli 11, 12 (such as light, and electric and magnetic fields), which provides novel schemes for performing spin memory and logic operations. Here we construct a molecular device using such molecules as templates to engineer interfacial spin transfer resulting from hybridization and magnetic exchange interaction with the surface of a ferromagnet; the device shows an unexpected interfacial magnetoresistance of more than 20 per cent near room temperature. Moreover, we successfully demonstrate the formation of a nanoscale magnetic molecule with a well-defined magnetic hysteresis on ferromagnetic surfaces. Owing to strong magnetic coupling with the ferromagnet, such independent switching of an adsorbed magnetic molecule has been unsuccessful with single-molecule magnets 13 . Our findings suggest the use of chemically amenable phenalenyl-based molecules as a viable and scalable platform for building molecular-scale quantum spin memory and processors for technological development.The diversity and flexibility of molecular synthesis has given researchers ample freedom to design functional molecules for spintronics. These include molecular magnets 14 , spinfilter molecules 15 , spin-crossover molecules 16 , molecular batteries 17 , molecular conductors 10 , molecular switches 12 , and spacer layers for organic spin valves 18 and magnetic tunnel junctions 19,20 . Using such synthetic techniques, we have designed a neutral planar phenalenyl-based molecule, zinc methyl phenalenyl (ZMP, C 14 H 10 O 2 Zn; see Fig. 1a and Methods), that has no net spin. When these molecules are grown on a ferromagnetic surface, interface spin transfer causes a hybridized organometallic supramolecular magnetic layer to develop, which shows a large magnetic anisotropy and spin-filter properties 21 . This interface layer creates a spin-dependent resistance and gives rise to an interface magnetoresistance (IMR) effect.

We directly measured a spin diffusion length (lambdas) of 13.3 nm in amorphous organic semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, lambdas in single-crystalline rubrene can be expected to reach even millimeters, showing the potential for organic spintronics development.

A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller et al., Phys. Rev. Lett. 86, 3847 (2001)].

No abstract