2008
DOI: 10.1103/physrevlett.101.147201
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Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

Abstract: A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a re… Show more

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Cited by 131 publications
(120 citation statements)
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References 24 publications
(22 reference statements)
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“…As electrode material, we consider fcc Cu oriented along the [001] direction (lattice constant 3.61Å), which is a material choice that has been adopted in several experiments. [17][18][19][20] When the tetragonal EuO unit cell is used, the lattice constant of Cu can be matched with only a slight strain to the EuO lattice, since the dimensions along x and y are a EuO / √ 2 = 3.63Å. The junction setup is illustrated in Fig.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…As electrode material, we consider fcc Cu oriented along the [001] direction (lattice constant 3.61Å), which is a material choice that has been adopted in several experiments. [17][18][19][20] When the tetragonal EuO unit cell is used, the lattice constant of Cu can be matched with only a slight strain to the EuO lattice, since the dimensions along x and y are a EuO / √ 2 = 3.63Å. The junction setup is illustrated in Fig.…”
Section: Methodsmentioning
confidence: 99%
“…3 SFTJs based on polycrystalline EuO in the form of a metal/EuO/metal heterojunction have been studied in several recent experiments. [16][17][18][19][20][21][22] However, the spin transport properties of crystalline epitaxial EuO junctions have not been studied theoretically so far. The purpose of this paper is to provide such theoretical insight.…”
Section: T (E) ∝ Exp[−2κ( E)t] With κ( E) = √mentioning
confidence: 99%
“…They have been used for decades to generate polarized currents in spintronic circuits. 23,24 In spite of numerous works devoted to the theoretical study of S/F structures, the study of the spin-filter effect in connection with the transport properties of S/F structures still remains open. For example, in Ref.…”
Section: Introductionmentioning
confidence: 99%
“…For many years they have attracted interest. For example, EuO has been suggested for applications in spin-filter devices, 5,[31][32][33][34] and EuS ͑Refs. 35-41͒ as well as EuSe ͑Ref.…”
Section: Properties Of Europium Chalcogenidesmentioning
confidence: 99%