Posttraumatic stress disorder (PTSD) and posttraumatic growth (PTG) are two different outcomes that may occur after experiencing traumatic events. Resilience and rumination are two important factors that determine the development of these outcomes after trauma. We investigated the association between these two factors, PTSD and PTG, among Chinese survivors in an earthquake. With a convenience sample of 318 survivors from earthquake, we measured trauma exposure, PTSD, PTG, resilience, and rumination (Impact of Event Scale-Revised, Posttraumatic Growth Inventory, 10 item Connor–Davidson Resilience Scale, Ruminative Response Scale). Then we used bivariate correlation and structural equation modeling to examine the structure of relations among these factors. Results showed that resilience and reflective rumination have a positive effect on PTG (β = 0.32, p < 0.001; β = 0.17, p = 0.049). Earthquake exposure, brooding rumination and depressed-related rumination are related with higher level of PTSD (β = 0.10, p = 0.021; β = 0.33, p < 0.001; β = 0.36, p < 0.001). The findings suggest distinct determinants of the negative and positive outcomes, and this may provide better understanding about the risk and protective factors for traumatic reactions.

Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly­(vinylidene fluoride-trifluoroethylene) (P­(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to ∼10–14A in the InSe channel by tuning the three different polarization states in ferroelectric P­(VDF-TrFE) and improved interface properties using h-BN as a substrate, the ferroelectric-gated InSe photodetectors show a high on/off ratio of over 108, a high photoresponsivity up to 14 250 AW–1, a high detectivity up to 1.63 × 1013 Jones, and a fast response time of 600 μs even at zero-gate voltage. The present results highlight the role of ferroelectric P­(VDF-TrFE) in tuning the carrier transport of InSe and may provide an avenue for the development of InSe-based photodetectors.

The P2-type layered oxide Na2/3[Ni1/3Mn2/3]­O2 cathode material is considered a promising material for sodium-ion batteries because of its high capacity and operating voltage together with a simple synthesis process. However, unfavorable electrochemical performance degradation during cycling is an obstacle to its practical application. Because ZnO has excellent electrical conductivity as a semiconductor material, it was selected for the coating modification study in this experiment. Transmission electron microscopy and energy-dispersive spectroscopy showed a uniform ZnO-coating layer on the surface of the particles with a thickness of 5 nm. When comparing the scanning electron microscope and X-ray diffraction (XRD) results of the electrodes before and after the cycle, we found that ZnO can inhibit the exfoliation phenomenon, and the morphology as well as the structure stability of the electrode were excellently maintained. In addition, according to the XRD refinement, part of Zn2+ entered the transition-metal oxides (TMO2) layer, which improves the stability of the crystal structure. On the basis of the synergistic effect between the ZnO coating and Zn2+ doping, the battery exhibited excellent cycle and rate performance. After 200 cycles at 0.5C (1C = 273 mA g–1), the battery still maintained a capacity of 70 mA h g–1 and a capacity retention rate of 75%. Therefore, we believe that ZnO coating can effectively improve the electrochemical performances of batteries.