Indium
selenide (InSe) has a high electron mobility and tunable
direct band gap, enabling its potential applications to electronic
and optoelectronic devices. Here, we report the fabrication of InSe
photodetectors with high on/off ratios and ultrahigh photoresponsivity,
using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))
copolymer films as the top-gate dielectric. Benefiting from the successful
suppression of the dark current down to ∼10–14A in the InSe channel by tuning the three different polarization
states in ferroelectric P(VDF-TrFE) and improved interface properties
using h-BN as a substrate, the ferroelectric-gated InSe photodetectors
show a high on/off ratio of over 108, a high photoresponsivity
up to 14 250 AW–1, a high detectivity up
to 1.63 × 1013 Jones, and a fast response time of
600 μs even at zero-gate voltage. The present results highlight
the role of ferroelectric P(VDF-TrFE) in tuning the carrier transport
of InSe and may provide an avenue for the development of InSe-based
photodetectors.
A new type of amphiphilic pillar[5]arene with excellent surface activity was designed and synthesized successfully. Interestingly, this pillar[5]arene shows controllable self-assembly behaviour in water and can be applied in white-light-emitting systems.
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