InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Wu, Liangmei; Shi, Jinan; Zhou, Zhang; Yan, Jiahao; Wang, Aiwei; Bian, Ce; Ma, Jiajun; Ma, Ruisong; Liu, Hongtao; Chen, Jiancui; Huang, Yuan; Zhou, Wu; Bao, Lihong; Ouyang, Min; Pantelides, Sokrates T.; Gao, Hongjun

doi:10.1007/s12274-020-2757-1

Cited by 58 publications

(52 citation statements)

References 50 publications

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“…It can be further improved by decreasing the thickness of the dielectric layer or adopting the dielectric materials with a high dielectric constant. [48,49] Figure 6d exhibits the power consumption under various supply voltages. The power consumption becomes larger with the supply voltage increasing and reaches up to ≈127 nW at V ds = 10 V. Balancing the gain and power consumption, the MoSe 2 inverter is more suitable for the logic circuits with high gain and low power complementary.…”

Section: Mose 2 Invertermentioning

confidence: 99%

Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics

Zhong

et al. 2021

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characterizations. J.Y. and Z.W. synthesized the MoSe 2 crystals. J.G. conducted the XRD characterizations. B.H. conducted the STEM characterizations under the direction of P.G. X.G. performed the DFT calculations under the direction of X.Z. Q.L. performed the current simulations. J.Y. conducted the AFM experiments. M.P. performed the speed measurements. P.W. performed the spectra experiments. P.W., T.H., and M.Z. assisted in analyzing experiments. All authors discussed the results and revised the manuscript.

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Section: Mose 2 Invertermentioning

confidence: 99%

Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics

Zhong

et al. 2021

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“…[10][11][12][13][14] In particular, point defects have been observed to act as singlephoton sources. [15][16][17][18][19][20][21][22][23] Such properties place bulk h-BN and its monolayer form in the spotlight for many potential applications, including DUV light emitting devices, [24][25][26] dielectric layers for two-dimensional (2D) heterostructures [27][28][29] and room temperature (RT) single photon emitters (SPEs) for quantum technologies. [30][31][32][33][34] Similarly to other technologically-relevant semiconductors, the successful application of h-BN depends on the understanding and control of its electronic and optical properties.…”

Section: Introductionmentioning

confidence: 99%

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Román¹,

Costa²,

Zobelli³

et al. 2021

2D Mater.

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Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet (DUV) light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the UV and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer.Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (LT-STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is (6.8 ± 0.2) eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of (0.7 ± 0.2) eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level.

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“…[9][10][11][12] With regard to inorganic flexible materials, nanowires, nanoribbons, nanosheets, and other 1D or 2D nanostructures have inherent mechan ical advantages as they can tolerate large bending and distortion. [13][14][15][16][17][18][19] Among the various flexible nanostructures, nano ribbons combine the longrange charge transfer feature of 1D nanomaterials and large contact surface of 2D materials and hence, nanoribbons are suitable for flex ible devices. [20,21] Metal phosphides are important semi conductors with various atomic structures and excellent photoelectronic proper ties.…”

Section: Introductionmentioning

confidence: 99%

Topochemical Synthesis of Copper Phosphide Nanoribbons for Flexible Optoelectronic Memristors

Liu

et al. 2021

Adv Funct Materials

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Metal phosphide nanoribbons are suitable building blocks for flexible photoelectronic microdevices due to the special electronic structure, large contact area, and excellent mechanical properties. In this work, single‐crystal copper phosphide nanoribbons (Cu3P NRs) are prepared topochemically from crystalline red phosphorus nanoribbons (cRP NRs) to retain the cRP morphology. The Cu3P NRs are used to construct flexible photoelectronic memristors on the ITO/PEN substrate with the native oxidized shell of Cu3P NRs serving as the charge trapping layer to modulate the resistance switching characteristics. The Cu3P NRs‐based memristors have outstanding nonvolatile memory properties in different mechanical bending states and different bending times. Optically and electrically modulated artificial synaptic functions are observed from the Cu3P NRs‐based memristors and owing to the memory backtracking function, pattern recognition is achieved with the Ag/Cu3P/ITO artificial synapse array. The topochemical synthesis method constitutes a universal approach to produce nanostructured compounds with an unusual morphology and specific crystalline orientation. The results also reveal that metal phosphides are excellent materials in memristors for future optoelectronic neuromorphic computing.

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InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Cited by 58 publications

References 50 publications

Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics

Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Topochemical Synthesis of Copper Phosphide Nanoribbons for Flexible Optoelectronic Memristors

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InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Cited by 58 publications

References 50 publications

Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics

Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Topochemical Synthesis of Copper Phosphide Nanoribbons for Flexible Optoelectronic Memristors

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Product

Resources

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Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics

Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics