Highly electron‐deficient heteroatom (N, S, Se) bay‐annulated PBIs exhibiting ordered columnar phase over a wide mesomorphic range including ambient temperature are reported in this manuscript. These compounds with six peripheral n‐decyloxy chains exhibited absorption spectra with high molar extinction coefficients, electron‐deficient nature and self‐assembling behaviour. A detailed comparison with the PBIs bearing six peripheral n‐decyl chains was also carried out to get the valuable insights on the structure‐property relations in this important class of organic semiconductors. Both of the PBI series were tested for their charge carrier mobility by space charge limited current method and found that they exhibit ambipolar conductivity. This is in contrary to the vast body of literature, where most of the PBI based semiconductors exhibit electron transport behaviour. In general, PBIs derived from tri‐n‐alkyl anilines exhibit higher mobility values than the PBIs derived from tri‐n‐alkoxy anilines. Especially, the ambipolar S‐annulated PBI derived from tri‐n‐alkyl aniline exhibited highest hole (8.39×10−3 cm2/V.s) and electron (1.5×10−2 cm2/V.s) mobility values and promising for the application in organic electronics.
A self-assembled ambipolar organic semiconductor based on naphthalene diimide with low clearing temperature, solution processability, high molar extinction coefficient, exhibiting room temperature columnar hexagonal liquid crystalline phase is reported.
Chemiresistors have been widely employed
in monitoring toxic fumes,
gases, and environmental pollutants. Among a plethora of metal oxide
semiconductors (MOX) used for preparing chemiresistors, zinc oxide
is the topmost candidate. ZnO-based gas sensors are cost-effective,
nontoxic, stable, and easily prepared by wet chemical facile approaches.
ZnO nanostructures are the most promising candidates for leakage detection
of toxic gases with reliable performance. In this regard, several
investigations have been carried out to increase sensor response at
room temperature (RT). Current advances in ZnO nanostructures-based
thin films are the subject of this review paper. The review begins
with a basic survey of ZnO thin films for gas sensors focusing on
how the structure and properties of ZnO affect the gas response mechanisms,
various factors and processing methods of ZnO nanostructures, and
possible ways to enhance the gas response characteristics of ZnO-based
sensors.
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