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A general chemical transformation process for synthesis of more than 45 kinds of one-dimensional metal chalcogenide nanostructure.

Entanglement in multiple degrees of freedom has many benefits over entanglement in a single one. The former enables quantum communication with higher channel capacity and more efficient quantum information processing and is compatible with diverse quantum networks. Establishing multi-degree-of-freedom entangled memories is not only vital for high-capacity quantum communication and computing, but also promising for enhanced violations of nonlocality in quantum systems. However, there have been yet no reports of the experimental realization of multi-degree-of-freedom entangled memories. Here we experimentally established hyper- and hybrid entanglement in multiple degrees of freedom, including path (K-vector) and orbital angular momentum, between two separated atomic ensembles by using quantum storage. The results are promising for achieving quantum communication and computing with many degrees of freedom.

The silicon-on-chip (SOI) photonic circuit is a very promising platform for scalable quantum information technology for its low loss, small footprint, and its compatibility with CMOS as well as telecom communications techniques. Multiple multiplexed entanglement sources, including energytime, time-bin, and polarization-entangled sources based on 1-cm-length single-silicon nanowire, are all compatible with the (100-GHz) dense-wave-division-multiplexing (DWDM) system. Different methods, such as two-photon interference as well as Bell-inequality and quantum-state tomography, are used to characterize the quality of these entangled sources. Multiple entanglements are generated over more than five channel pairs with high raw (net) visibilities of around 97% (100%). The emission spectral brightness of these entangled sources reaches 4.210 5 /(s.nm.mW). The quality of the photon pair generated in continuous and pulse pump regimes are compared. The high quality of these multiplexed-entanglement sources makes them very promising for use in minimized quantum communications and computation systems.

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The coupling of doped charge carriers with the crystal lattice is an efficient route to modulate the phase transition behavior of VO2. In the current work, the N-incorporated VO2 samples are prepared through the low-energy N2 + ion sputtering of the crystalline VO2 films. The critical temperatures (T c) of the metal–insulator transition (MIT) process are observed to decrease with a value of ∼18 °C for VO1.9N0.1 and VO1.87N0.13 samples. The effects of nitrogen incorporation on the MIT depression have been revealed by the electronic structural characterizations via the X-ray adsorption near-edge structure (XANES) spectroscopy and photon electronic spectroscopy (SRPES). The implanted nitrogen atoms are identified to coordinate with the V4+ ions at the substituent position of oxygen atoms. The p-type dopant provides the hole carriers into the d∥ sub-bands, resulting in the attenuation of the interaction within V–V dimer and the narrowing of the energy band gap in M1 phase. Both aspects unanimously facilitate the depression of the MIT temperature in N-incorporated VO2.

Molecule-substrate interaction plays a vital role in determining the electronic structures and charge transfer properties in organic-transition metal oxides (TMOs) hybridized devices. In this work, the interactions at the FePc/MoO3 interface has been investigated in detail by using synchrotron radiation photoemission spectroscopy (SRPES) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Compared with the annealing of the bare MoO3 film, the FePc adsorption is found to promote the thermal reduction of the underlying MoO3 film. XPS and NEXAFS experimental results unanimously demonstrate a strong electronic coupling between FePc molecules and the MoOx (x < 3) substrate. A direct Fe-O coordination at the interface as well as an electron transfer from the molecules toward the substrate is proposed. This strong coupling is compatible with a facile electron transfer from FePc molecules toward electrode through a MoOx interlayer. The understanding of the molecule-substrate interaction at the atomic level is of significance in engineering functionalized surfaces with potential applications in nanoscience, molecular electronics and photonics.

A feasible and efficient membrane for long-term treatment of complex oily wastewater is especially in demand, but its development still remains a challenge because of serious membrane fouling and incomplete/destructive reclamation methods. Herein, an interpenetrating TiO2 nanorod-decorated membrane with self-locked and self-cleaning properties is rationally fabricated via coaxial electrospinning and hydrothermal synthesis. The self-locked membrane shows full reinstatement of the original state and exhibits satisfactory mechanical strength, superhydrophilicity, underwater superoleophobicity, and robust solvent resistance, which endow the membrane with successful separation for 16 types of highly emulsified oil-in-water emulsions (e.g., surfactant-free; anionic, cationic, and nonionic surfactant-stabilized). Moreover, successful sequencing treatment of soluble organic emulsions using the separated “bait–hook–destroy” strategy indicates that the pristine membrane can be used to treat multipollutant wastewater with various limits. Most importantly, the fouled membrane can easily be reinstated by light irradiation without reduction of both mechanical strength and separation performance. As a proof of concept, the as-synthesized membrane shows an ultrahigh flux over 5000 L m–2 h–1 with a removal efficiency of >99.92%. The present development would provide a highly efficient strategy for the fabrication of an inorganic–organic revivable electrospinning membrane for various applications.