A dual‐phase all‐inorganic composite CsPbBr3‐CsPb2Br5 is developed and applied as the emitting layer in LEDs, which exhibited a maximum luminance of 3853 cd m–2, with current density (CE) of ≈8.98 cd A–1 and external quantum efficiency (EQE) of ≈2.21%, respectively. The parasite of secondary phase CsPb2Br5 nanoparticles on the cubic CsPbBr3 nanocrystals could enhance the current efficiency by reducing diffusion length of excitons on one side, and decrease the trap density in the band gap on the other side. In addition, the introduction of CsPb2Br5 nanoparticles could increase the ionic conductivity by reducing the barrier against the electronic and ionic transport, and improve emission lifetime by decreasing nonradiative energy transfer to the trap states via controlling the trap density. The dual‐phase all‐inorganic CsPbBr3‐CsPb2Br5 composite nanocrystals present a new route of perovskite material for advanced light emission applications.

A large Rabi splitting (∼145 meV) is demonstrated in a plasmonic nanocavity coupled to a WS2 monolayer at room temperature. The nanocavity is composed of a silver nanocube and a silver film with an Al2O3 spacer of a few nanometers, which belongs to a nanoparticle on mirror (NPoM) type. The surface plasmon resonance (SPR) of the nanocavity can be tuned by controlling the thickness of nanogap and the size of silver nanocubes, which allows to successively adjust the SPR to accurately match the exciton energy of WS2 monolayers (2.02 eV). A mode splitting can be clearly observed from the dark-field scattering spectrum of the single hybrid nanocavity, which is ascribed to a strong coupling between the nanocavity mode and the excitonic mode. Furthermore, the anticrossing curves of the hybrid system are obtained by recording the scattering spectra with varied sizes of silver nanocubes, which further validate the interaction regime. It presents a strong coupling platform for two-dimensional monolayers, which is of potential applications of the development of hybrid nanostructure devices.

Ligand-induced chirality in semiconductor nanocrystals (NCs) has attracted attention because of the tunable optical properties of the NCs. Induced circular dichroism (CD) has been observed in CdX (X = S, Se, Te) NCs and their hybrids, but circularly polarized luminescence (CPL) in these fluorescent nanomaterials has been seldom reported. Herein, we describe the successful preparation of l- and d-cysteine-capped CdSe-dot/CdS-rods (DRs) with tunable CD and CPL behaviors and a maximum anisotropic factor ( g) of 4.66 × 10. The observed CD and CPL activities are sensitive to the relative absorption ratio of the CdS shell to the CdSe core, suggesting that the anisotropic g-factors in both CD and CPL increase to some extent for a smaller shell-to-core absorption ratio. In addition, the molar ratio of chiral cysteine to the DRs is investigated. Instead of enhancing the chiral interactions between the chiral molecules and DRs, an excess of cysteine molecules in aqueous solution inhibits both the CD and CPL activities. Such chiral and emissive NCs provide an ideal platform for the rational design of semiconductor nanomaterials with chiroptical properties.

The electron-selective layer (ESL) is an indispensable component of perovskite solar cells (PSCs) and is responsible for the collection of photogenerated electrons. Preparing ESL at a low temperature is significant for future fabrication of flexible PSCs. In this work, solution-processed amorphous WO(x) thin film was prepared facilely at low temperature and used as ESL in PSCs. Results indicated that a large quantity of nanocaves were observed in the WO(x) thin film. In comparison with the conventional TiO2 ESL, the WO(x) ESL exhibited comparable light transmittance but higher electrical conductivity. Compared with the TiO2-based PSCs, PSCs that use WO(x) ESL exhibited comparable photoelectric conversion efficiency, larger short-circuit current density, but lower open-circuit voltage. Electrochemical characterization indicated that the unsatisfied open-circuit voltage and fill factor were caused by the inherent charge recombination. This study demonstrated that this material is an excellent candidate for ESL.

High-performance quantum dot light-emitting diodes (QLEDs) are being considered as a next-generation technology for energy efficient solid-state lighting and displays. InP QLEDs are the most promising alternative to the toxic CdSe QLEDs. Unlike the problems of poor hole injection in CdSe-based QLEDs, highly delocalized electrons and parasitic emissions are serious problems in green-emitting InP QLEDs. The loss mechanism and device physics in InP QLEDs have not been sufficiently studied since the first report of InP QLED in 2011. This Focus Review summarizes the recent efforts on improving the performance of InP QLEDs from the perspectives of core/shell structures to optimization of carrier transport layers. It is our intention to conduct a review as well as clarify some previous misunderstandings regarding the device physics in InP QLEDs and to provide some insights for the possible solutions to the challenging problems in InP QLEDs.

Light-emitting diodes (LEDs) are widely used in our daily lives. Both light and heat are generated from LED chips and then transmitted or conducted through multiple packaging materials and interfaces. Part of the transmitted light converts into heat along the light propagation; in return, the accumulation of heat leads to the degradation of light output. The accumulated heat negatively influences the reliability and longevity of LEDs, and thus thermal management is critical for LED packaging and applications. On the other hand, in LED packaging processes, many fluid flow problems exist, such as phosphor coating, silicone injection, chip bonding, solder reflow, etc. Amongst them, phosphor coating is the most important process which is essential for LED performance. Phosphor gel is a kind of non-Newton fluid and its coating process is a typical fluid-flow problem. Overall, since LED packaging and applications present many heat and fluid flow problems, obtaining a full understanding of these problems enables advancements in the development of LED processes and designs. In this review, the emphasis is placed on heat generation in chips, heat flow in packages and application products, fluid flow in phosphor coating process, etc. This is a domain in which significant progress has been achieved in the last decade, and reporting on these advances will facilitate state-of-the-art LED packaging and application technologies.

Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

As the concerns about using cadmium-based quantum dots (QDs) in display are growing worldwide, InP QDs have drawn much attention in quantum dot light-emitting diodes (QLEDs). However, pure blue InP based QLED has been rarely reported. In this work, first of all, pure blue InP/ZnS QDs with emission wavelength of 468 nm and quantum yield of 45% are synthesized. Furthermore, zinc oleate and STOP are used as precursors to epitaxially grow the second ZnS shell. The residual zinc stearate reacted with STOP to form ZnS shell, which increased the thickness and stability of QDs. Moreover, as the residual precursor of zinc stearate is removed, the current density increased from 13 mA cm −2 to 121 mA cm −2 at 8 V for the hole only device. External quantum efficiency increased from 0.6% of InP/ZnS QLED to 1.7% of InP/ZnS/ZnS QLED.