Highlights d The excitation/inhibition (E/I) ratio is dynamic across the 24h day d Fluctuations in the E/I ratio depend on sleep/wake history d E/I ratio changes are circuit specific, not uniform across all synapses

Recent interest in approximate computation is driven by its potential to achieve large energy savings. This paper formally demonstrates an optimal way to reduce energy via voltage over-scaling at the cost of errors due to timing starvation in addition. We identify a fundamental trade-off between error frequency and error magnitude in a timing-starved adder. We introduce a formal model to prove that for signal processing applications using a quadratic signal-to-noise ratio error measure, reducing bit-wise error frequency is sub-optimal. Instead, energy-optimal approximate addition requires limiting maximum error magnitude. Intriguingly, due to possible error patterns, this is achieved by reducing carry chains significantly below what is allowed by the timing budget for a large fraction of sum bits, using an aligned, fixed internal-carry structure for higher significance bits.We further demonstrate that remaining approximation error is reduced by realization of conditional bounding (CB) logic for lower significance bits. A key contribution is the formalization of an approximate CB logic synthesis problem that produces a rich space of Pareto-optimal adders with a range of quality-energy tradeoffs. We show how CB logic can be customized to result in overand under-estimating approximate adders, and how a dithering adder that mixes them produces zero-centered error distributions, and, in accumulation, a reduced-variance error. We demonstrate synthesized approximate adders with energy up to 60% smaller than that of a conventional timing-starved adder, where a 30% reduction is due to the superior synthesis of inexact CB logic. When used in a larger system implementing an image-processing algorithm, energy savings of 40% are possible.

Hafnium oxide (HfO 2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates under different growth temperature and oxygen flow. The effect of different growth conditions on the structure and optical characteristics of deposited HfO 2 film has been studied using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and variable angle spectroscopic ellipsometry (VASE). The XPS measurements and analyses revealed the insufficient chemical reaction at the lower oxygen flow rate and the film quality improved at higher oxygen flow rate. Via GIXRD, it was found that the HfO 2 films on Si were amorphous in nature, as deposited at lower deposition temperature, while being polycrystalline at higher deposition temperature. The structural phase changes from interface to surface were demonstrated. The values of optical constants and bandgaps and their variations with the growth conditions were determined accurately from VASE and XPS. All analyses indicate that appropriate substrate temperature and oxygen flow are essential to achieve high quality of the AVD-grown HfO 2 films.

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