Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells Appl. Phys. Lett. 87, 121918 (2005); 10.1063/1.2048819
Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski siliconA model is presented for the growth and dissolution of oxygen precipitates in Czochralski silicon during heat treatment. Growth and dissolution rates are newly derived and inserted into a set of chemical rate equations and a Fokker-Planck equation. It can calculate the size distribution of the oxygen precipitates and oxygen concentration profile without calculation of the interfacial concentrations at the interface of Si matrix and precipitates. It accounts for the oxidizing ambient effect, the solubility enhancement effect of oxygen, and the surface recombination and generation of point defects. The formation of stacking faults is also taken into account. This approach allows one to calculate more accurately the residual oxygen depth profile and the density distribution of oxygen precipitates which can be measured experimentally. By comparing the simulated results with experimental ones, it is proved that this model can be used to estimate the depth profile and the defect densities under inert conditions and oxidation conditions.
A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.
The low field electron mobility in n-type HgCdTe is calculated by using the relaxation time approximation method. Scattering mechanisms considered in the analysis are ionized impurity, electron–hole, alloy, and polar optical-phonon (two types) scatterings. The calculation also retains band-structure effects such as nonparabolic conduction band, electron wave function admixture, and velocity degradation as the electron energy increases. Furthermore, degeneracy is incorporated without approximation. For polar optical-phonon momentum relaxation time, we employ a model that can be applicable at low temperature, when the thermal energy is lower than the optical-phonon energy. The calculation results for drift mobility are in good agreement with the Monte Carlo results. The effects of donor level, compensation, and ionicity of impurity on Hall mobility are also presented.
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