Double-gate (DG) MOSFETs came into popularity because of its excellent scalability and better immunity to Short Channel Effects. They are used for CMOS applications beyond the 70 nm node of the SIA roadmaap. However DG devices with channel lengths below 100nm show considerable leakage current and threshold voltage roll off. In this paper, we investigate the influence of channel engineering on the performances of Double Gate (DG) MOSFETs using high-k dielectrics for system-on-chip applications. A Single Halo Double Gate (SH DG) MOSFET is simulated using 2D device simulator and performance is analysed for parameters such as Early voltage, electron velocity and electron mobility. The impact of high-k gate dielectrics on the device short channel performance is studied over a wide range of dielectric permittivity. The device shows 20% increase in drain current as compared to conventional MOSFET. The integration of high-k gate dielectrics further enhances the performance. Drain current increases by 28% and early voltage increases by 34% as the dielectric value increases. The electron velocity also increases with increasing dielectric value.
FinFETs (fin field effect transistors) are used for complementary-symmetry metal-oxide-semiconductor applications beyond the 45-nm node of the SIA roadmap because of their excellent scalability and better immunity to short channel effects. However, FinFETs having channel lengths below 100 nm show considerable leakage current and threshold voltage roll-off. To overcome these effects, a channel engineering technique is introduced. A single halo (SH) FinFET is developed using Sentaurus simulator, and its analog performance is investigated. The device performance is analysed by replacing the gate dielectric silicon dioxide with various high dielectric constant (k) materials, and it is observed that the integration of high-k dielectrics in the devices significantly reduces the short channel effects and leakage current. The suitability of nanoscale SH FinFETs for circuit applications is observed with the help of an inverter circuit, and their gain values are calculated for circuit applications.
In the past, most of the research and development efforts in the area of CMOS and IC's are oriented towards reducing the power and increasing the gain of the circuits. While focusing the attention on low power and high gain in the device, the materials of the device also been taken into consideration. In the present technology, Computationally intensive devices with low power dissipation and high gain are becoming a critical application domain. Several factors have contributed to this paradigm shift. The primary driving factor being the increase in scale of integration, the chip has to accommodate smaller and faster transistors than their predecessors. During the last decade semiconductor technology has been led by conventional scaling. Scaling, has been aimed towards higher speed, lower power and higher density of the semiconductor devices. However, as scaling approached its physical limits, it has become more difficult and challenging for fabrication industry. Therefore, tremendous research has been carried out to investigate the alternatives, and this led to the introduction of new Nano materials and concepts to overcome the difficulties in the device fabrications. In order to reduce the leakage current and parasitic capacitance in devices, gate oxide high-k dielectric materials are explored. Among the different high-k materials available the nano size Zirconium dioxide material is suggested as an alternate gate oxide material for devices due to its thermal stability and small grain size of material. To meet the requirements of ITRS roadmap 2012, the Multi gate devices are considered to be one of the most promising technologies for the future microelectronics industry due to its excellent immunity to short channel effects and high value of On current. The double gate or multi gate devices provide a better scalability option due to its excellent immunity to short-channel effects. Here the different high-k materials are replaced in different Multi Gate MOSFET devices and its performance were studied.
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