A design concept and experimental results are reported on a distributed amplifier with a flat gain characteristic. To obtain a broadband characteristic, the distributed amplifier is designed in such a way that the input power to each FET is as equal as possible. The obtained performances at 2 to 18 GHz are such that the gain is 7 ± 0.5 dB, the noise figure is less than 5.8 dB, and the VSWR is less than 2. In this amplifier, a self‐bias circuit is installed at the source electrode of each FET so that it can be operated with a single power supply.
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