A 2 ∼ 18‐GHz band distributed MMIC amplifier with single supply bias network

Abstract

A design concept and experimental results are reported on a distributed amplifier with a flat gain characteristic. To obtain a broadband characteristic, the distributed amplifier is designed in such a way that the input power to each FET is as equal as possible. The obtained performances at 2 to 18 GHz are such that the gain is 7 ± 0.5 dB, the noise figure is less than 5.8 dB, and the VSWR is less than 2. In this amplifier, a self‐bias circuit is installed at the source electrode of each FET so that it can be operated with a single power supply.

Mmic Research and Development

“…A 2-18-GHz distributed amplifier and its characteristics are shown in Fig. 6 [12]. Input/output VSWR is less than 2 for the operating frequency range.…”