A new resist system composed of a chemically amplified positive resist and an organic base designed to be compatible with an acid generator has been developed to improve resolution on TiN films. It was clarified that the non-uniformity of the organic base like the acid generator in the resist film significantly contributes to high resist performance. A new hardening method has also been developed to improve the thermal stability of resist patterns for metal etching. Using the new technologies, 0.25-µ m line and space (l&s) resolution on TiN films and highly accurate metal etching have been achieved.
Subquarter-micrometer gate-length CMOS devices have been designed and fabricated. A single phosphorous-doped poly(n+)-Si gate and a 3.5-nm-thick gate oxide are used, and a retrograde twin-well structure with trench isolation has been adopted. Latch-up holding voltages exceed 8 V. The transconductances of 0.22-pm gate-length n and p MOSFET's are 450 and 330 mS/mm, and unloaded ring oscillator delays are 36 ps at 2 V. A static-type 1/2 divider that has nMOSFET's of 0.16-pm gate length and pMOSFET's of 0.22-pm gate length achieved a maximum operating frequency of 1.3 GHz and power of 5.6 mW at a supply voltage of 2 V.
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