Various kinds of field-effect transistor (FET) have been fabricated with C 60 nanowhisker (NW) and also studied for nanoelectronics application. Especially, pure and solvated C 60 NWs have been synthesized in N 2 environment so as to clarify the best device performance of C 60 NW-FET. The FET works not only under vacuum but also in N 2 environment when kept in the solvated condition. The solvated C 60 NW-FET shows a clear improvement of their on/off ratio in the solvated condition, and the highest electron mobility after annealing. Although further study is needed, our results demonstrate the possibility, by appropriate choice of the solvent, of achieving good improvements in FET performance. Moreover, new kinds of C 60 NW, such as derivative-based and nanotube-type one, have also been studied with regards to their fundamental FET characteristics.
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