Thin film of (Bao.7sSro.?s)Ti@ with equivalent SiOz thickness of 0.47nm has been developed for capacitor dielectric film of 256Mbit DRAM. A novel cell design named FOGOS (Folded Global and Open Segment bit-lie cell) structure is also proposed for 256Mbit DRAM. By combining high dielectric constant film and FOGOS design, we have succeeded in making a practical and integrated cell that has sufficient cell capacitance with planar stacked capacitor, small bitline parasitic capacitance and large lithographic tolerance of alignment and DOF. 0.72 pm2 cell size based on 0.25 pn process technology is realized.
The kinetic energy density t G (r), where G denotes the gradient form (∇ψ) 2 , is known to be a functional of the ground-state density ρ(r), but the functional remains unknown. For an arbitrary number of closed shells in a bare Coulomb field, an exact first-order differential equation is derived giving t G (r) solely in terms of s-state information. Numerical illustrations are given of the main analytical results. PACS numbers: 21.10.Sf, 31.15.Ew Some time ago, one of us [1] obtained a spatial generalization of Kato's theorem
Characteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated.Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CC1 4 were measured.Sb profiles were also measured by Rutherford backscattering techniques.It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation.It was also fotind that a latent image of an Sb implanted pattern at a dose Ž 3.8x10 5 /cm 2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.
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