Semiconducting single-wall carbon nanotubes (s-SWCNTs) are promising materials with potential applications in thin-film transistors (TFTs). However, separation techniques are required to obtain highly enriched s-SWCNTs since conventional as-grown SWCNTs are a mixture of 70% semiconducting and 30% metallic SWCNTs. Here, we developed a rapid single-step aqueous two-phase extraction of high-purity s-SWCNTs using isomaltodextrin, which is a cost-effective polysaccharide that contains a large amount of α-1,6-glucosidic linkages. We also succeeded in fabricating high-density uniform films directly from the high-purity s-SWCNT extract. Fabricated TFTs exhibited an excellent on/off ratio, carrier mobility, and on-current density.
Owingt ot heir remarkable properties,s inglewalled carbon nanotube thin-film transistors (SWCNT-TFTs) are expected to be used in various flexible electronics applications. To fabricate SWCNT channell ayers for TFTs, solution-basedf ilm formation on as elf-assembled monolayer (SAM) covered with amino groups is commonly used. However,t his method uses highly oxidized surfaces, which is not suitable for flexible polymeric substrates. In this work, as olution-based SWCNT film fabrication using methoxycarbonyl polyallylamine (Moc-PAA) is reported. The NH 2 -terminated surface of the cross-linked Moc-PAA layer enables the formation of highly dense and uniform SWCNT networks on both rigid and flexible substrates. TFTst hat use the fabricated SWCNT thin film exhibited excellent performance with small variations. The presented simple method to access SWCNT thin film accelerates the realization of flexible nanoelectronics.
Nickel foils which were damaged by the irradiation of high‐energy electrons at room temperature in a high voltage electron microscope (HVEM) were deformed in‐situ while under observation and the behaviour of dislocations was studied. The behaviour of dislocations in the damaged crystal is different from that in the undamaged one. In the damaged crystals dislocation channeling is observed.
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