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In a study of 30 patients with either Plasmodium or falciparum infection, 29 (97%) showed the presence of atypical lymphocytes in the peripheral blood film, 24 (80%) had thrombocytopenia and 17 (57 %) had a mild to moderate anaemia. Bleeding was encountered in 2 patients without confirmatory evidence of disseminated intravascular coagulation.

The scaling of the junction depth, which can help to suppress the short channel effect, has become essential for the emerging nanoscale IC technology. The 2000 National Roadmap for semiconductors indicates that for complementary metal-oxide semiconductors with 0.13 µm and 0.09 µm gate lengths, junction depths of 43 nm and 35 nm are required, respectively. It will be of utmost importance to obtain accurate dopant profiles of the electrically activated junctions. In SIMS depth profiling, dopant profiles are broadened by sputter-induced roughening and a primary-energy-dependent ion mixing effect; shallow profiles are obscured by surface transient effects. Crater bottom roughening usually can be removed by oxygen flooding 1,2 or sample rotation 3,4 techniques; ion mixing can be minimized by lowering the primary ion energy and optimizing the incidence angle. For implanted profiles, the knock-on effects when sputtering from a high concentration to lower concentration region will significantly degrade the depth resolution.Backside SIMS depth profiling using primary ion energies >3 keV has been shown to improve the implanted trailing edge profile and avoid surface transient effects.5 -8 However, sample thinning from the backside, either by etching or polishing, requires that the surface be kept flat and smooth in order to achieve high depth resolution. We have developed an ultrashallow backside profiling technique

Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates J. Appl. Phys. 96, 3692 (2004); 10.1063/1.1782959 Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry High drive-in temperature during dopant activation of p ϩ -poly metal-oxide-semiconductor field effect transistors causes boron penetration through the thin gate oxide, which degrades the device performance. Conventional secondary ion mass spectrometry ͑SIMS͒ depth profiling is unable to accurately analyze boron penetration under rapid thermal annealing conditions due to ion knock-on and mixing effects. With the development of backside SIMS depth profiling technique using SOI wafers ͓Yeo et al., Surf. Interface Anal. 33, 373 ͑2002͒; Runsheim et al., J. Vac. Sci. Technol. B 20, 448 ͑2002͔͒, quantification of the amount of boron penetration becomes possible. In this article, boron penetration through decoupled plasma nitridation silicon dioxide was studied by performing both front and backside depth profiling using 0.5 keV O 2 ϩ with oxygen flooding and 2 keV Cs ϩ primary ions at oblique incidence in a Cameca IMS-6f SIMS instrument.