The influence of an additional bombardment with low-energy ions during conventional molecular beam epitaxy deposition is studied. A model is proposed describing the initial growth stages during conventional molecular beam epitaxy and ion-beam assisted molecular beam epitaxy. The additional bombardment with low-energy ions leads to a transformation of the growth mode from island growth to layer-by-layer growth. In the first stages of film growth, the hyperthermal ion bombardment causes an increasing detachment of atoms from the tops of the growing islands. Based on the model, using simulation by the kinetic-equation method, the size distribution function of growing clusters is calculated. The theoretical results are in good agreement with experimental results obtained upon the deposition of GaN films.
Silicon carbide nano-clusters have some promising specific properties for micro-and optoelectronics. In this work the SiC clusters formation and the growth on the silicon (111) surface during molecular beam epitaxy (MBE) have been investigated theoretically with implementation of the rate equations simulation model. The model was successfully applied to obtain the temperature dependence of the cluster concentration. The results were compared with the experimental data [1][2][3]. Furthermore, influence of the surface reconstruction transition (7x7) ® (1x1) on the temperature concentration dependence was investigated.
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