Modelling the Formation of Nano-Sized SiC on Si

Safonov, K. L.; Schmidt, A. A.; Kulikov, D. V.; Cimalla, V.; Pezoldt, Jörg

doi:10.4028/www.scientific.net/msf.433-436.591

Cited by 12 publications

(8 citation statements)

References 8 publications

(13 reference statements)

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“…A similar approach is also used in several previous reports. [19][20][21]23,24 The detailed description of each temperature range is presented below.…”

Section: Calculation Results and Dicussionmentioning

confidence: 99%

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

et al. 2011

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The evolution of argon-filled nanocavities in a copper crystal under annealing is studied experimentally and theoretically. The subsurface argon-filled nanocavities are formed after a short annealing at a temperature ∼1000 K by coalescence of subsurface defects initially created by argon implantation. The further prolonged annealing at a temperature above 1075 K leads to decomposition of the nanocavities and diffusion of implanted argon out of the sample. According to a simple analysis, the mechanism of the nanocavity formation is governed not only by the migration of simplest defects, such as vacancies and argon and copper interstitials, but also to a large extent, by diffusion and interaction of the complexes of these simplest defects. The experimental studies with x-ray photoelectron spectroscopy and scanning tunneling microscopy and spectroscopy provide valuable data sets of the density of nanocavities and their size and depth distribution. Based on the experimental results, a theoretical model is developed. The calculation with the model proves that the growth of the nanocavities is mainly determined by the temperature-induced migration of vacancy-argon complexes. By combining the experimental data with the simulation results, the migration energy of these kinds of complexes is estimated ∼2.55-2.75 eV. Moreover, the calculation with our model provides the estimate of the dissociation energy of a multiple complex, consisting of two vacancies and two argon atoms, as 1.10-1.18 eV. These parameters, reported in this article, play a key role in the description of the kinetics of the growth and decomposition of nanocavities.

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“…A similar approach is also used in several previous reports. [19][20][21]23,24 The detailed description of each temperature range is presented below.…”

Section: Calculation Results and Dicussionmentioning

confidence: 99%

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

et al. 2011

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“…In this case, by analogy with Refs. , it can be assumed that the binding energy of the Co atom at the cluster boundary does not depend on the number of atoms in the cluster. The binding energy

ϵ_{s C o}^{b}

for the surface cluster is equal to

ϵ_{s C o}^{b}

≈ 1.3 eV; for the subsurface cluster, value of the binding energy

ϵ_{u C o}^{b}

is unknown.…”

Section: Physical Modelmentioning

confidence: 99%

Formation and Growth of Subsurface Cobalt Clusters in Copper

Lubov

Kulikov

Trushin

2017

Physica Status Solidi (b)

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Growth of subsurface cobalt clusters during the deposition of cobalt on copper substrate has been studied through kinetic modeling. It is shown that, in comparison with reverse transposition, the formation of subsurface clusters is caused by a strong dissociation of surface cobalt clusters and preferential transposition of surface cobalt atoms to subsurface copper layers. Cobalt clusters’ size distribution functions are calculated for the different deposition times. Values of the migration energy of cobalt atoms in subsurface layers of copper, and the binding energy of subsurface cobalt atoms with the subsurface cobalt cluster are estimated.

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“…The evolution of depth profile of sample atomic components during film growth by molecular beam epitaxy and subsequent annealing as well as during SIMS sputter profiling was simulated in frames of the complex approach including analytical and computer simulations methods [5][6][7][8]. Simulation of growth and annealing of the sample is carried out within kinetic approach, based on the solving of the set of balance kinetic equations describing deposition, precipitation, diffusion processes etc.…”

Section: Concentration Depth Profile Simulationmentioning

confidence: 99%

“…film formation and compositional analysis, one can separate kinetic and ballistic contributions. Simulation of the film growth by means of the rate equations method [5][6][7] in combination with subsequent simulation of the ion sputtering by means of the dynamic Monte Carlo [7,8] computer code seems to be the most efficient approach.…”

Section: Introductionmentioning

confidence: 99%

Concentration Profile Simulation of SiC/Si Heterostructures

Pezoldt

Kharlamov

Kulikov

et al. 2016

MSF

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Computer simulation of the concentration profiles evolution in SiC/Si heterostructures during growth and subsequent ion sputtering is presented. Simulation is based on a complex self-consistent approach combining kinetic and ballistic methods. Within the framework of the proposed method concentration depth profiles in SiC/Si heterostructure with pre-deposited Ge impurity are calculated and compared with experimental sputtering profiles obtained by secondary ion mass spectrometry.

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Modelling the Formation of Nano-Sized SiC on Si

Cited by 12 publications

References 8 publications

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

Formation and Growth of Subsurface Cobalt Clusters in Copper

Concentration Profile Simulation of SiC/Si Heterostructures

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