The spectral distribution of current noise was measured in n-type InSb in the range of 77 to 200 OK. The temperature dependences of noise lifetime and noise intensity are compared with theory. The result,s show that in the intrinsic range indirect recombination between electrons and holes occurs whereas a t low temperatures electron trapping into shallow states is the dominating noise mechanism.Die spektrale Verteilung des Stromrauschens im n-InSb wurde im Bereich 77 bis 200 O K gemessen. Die Temperaturabhangigkeiten der Rausch-Lebensdauer und der Rauschintensitat werden mit der Theorie verglichen. Die Ergebnisse zeigen, da13 im eigenleitenden Bereich indirekte Rekombinatinn auftritt und fur niedrige Temperaturen die Wechselwirkung der Elektronen mit flachen Haftstellen der dominierende Rauschmechanismus ist.
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