Current noise in n-type InSb

Abstract

The spectral distribution of current noise was measured in n-type InSb in the range of 77 to 200 OK. The temperature dependences of noise lifetime and noise intensity are compared with theory. The result,s show that in the intrinsic range indirect recombination between electrons and holes occurs whereas a t low temperatures electron trapping into shallow states is the dominating noise mechanism.Die spektrale Verteilung des Stromrauschens im n-InSb wurde im Bereich 77 bis 200 O K gemessen. Die Temperaturabhangigkeiten der Rausch-Lebensdauer und der Rauschintensitat werden mit der Theorie verglichen. Die Ergebnisse zeigen, da13 im eigenleitenden Bereich indirekte Rekombinatinn auftritt und fur niedrige Temperaturen die Wechselwirkung der Elektronen mit flachen Haftstellen der dominierende Rauschmechanismus ist.

Analysis of localized levels in semiconducting CdS from generation–recombination noise spectra

“…(equation (7)) and t,he amplitude A (equation (13)) of the g-r noise spectrum. To siniplify argrirrients further, the recombination coefficient r of the 5-centres in ( 7 ) has been assuiiied to be independent of the teiiiperature.…”

Recombination and Trapping of Excess Carriers in n-InSb

“…6. Acceptor-like traps in InSb were reported in a number of works [5,6,16,17]. Assuming that the 𝐸2 and 𝐸3 levels do not interact, the total recombination rate can be represented as the sum of the recombination rates of individual levels [13,18] (see Appendix).…”

“…As the temperature increases, the filling of the 𝐸3 level by electrons decreases, and traps can act as recombination centers, resulting in a single exponential waveform at temperatures around 160-170 K.To explain experimental data shown in Fig.4, a, the model was used that includes a donor-like recombination level 𝐸2 and an acceptor-like trapping level 𝐸3, Fig.6. Acceptor-like traps in InSb were reported in a number of works[5,6,16,17]. Assuming that the 𝐸2 and 𝐸3 levels do not interact, the total recombination rate can be represented as the sum of the recombination rates of individual levels[13,18] (see Appendix).…”