Analysis of localized levels in semiconducting CdS from generation–recombination noise spectra

Hoffmann, H. J.; Sohn, Won

doi:10.1002/pssa.2210440125

Cited by 22 publications

(8 citation statements)

References 15 publications

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“…These number fluctuations of conducting charge carriers may cause the Lorentzian shaped g-r noise contributions in the spectrum. Several authors [16][17][18] have measured g-r noise of discrete impurity level systems as a function of temperature and have estimated the energy position in the forbidden band. In the case of our diamond specimen the hard gap width is so narrow that carriers can be easily transferred across the hard gap with help of thermal energy.…”

Section: Introductionmentioning

confidence: 99%

Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

et al. 2005

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We have measured low frequency generation-recombination noise ͑g-r noise͒ spectra of a heavily borondoped diamond crystal over the temperature range 20-300 K. The experimental results show that there are two peaks in the g-r noise spectrum at 120 K and 67 K, respectively. The 120 K peak corresponds to experimental evidence for existence of a hard gap having width of 10.4 meV. We interpret the 67 K peak as evidence for Wigner lattice formation whose gap width is 5.8 meV.

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Section: Introductionmentioning

confidence: 99%

Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

et al. 2005

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“…In many experiments on 1/f noise in semiconductors, a hump in the high frequency region is observed [28][29][30] which usually is interpreted as a g-r noise level due to some additional impurity center [31]. The present model suggests that such a hump may also be interpreted as "g-r burst noise".…”

Section: /F Noise Due To Atomic Diffusion Of Impurity Centers L217mentioning

confidence: 66%

“…Hooge coefficient due to mobile defects in (31) ionization energy of X-centers ∆E def local variation of E X in presence of defects next to a fixed X-center f frequency f bn cut-off frequency of burst noise (see Fig. 6) f c corner frequency where 1/f noise is equal to g-r noise (see Fig.…”

Section: /F Noise Due To Atomic Diffusion Of Impurity Centers L217mentioning

confidence: 99%

1/f NOISE DUE TO ATOMIC DIFFUSION OF IMPURITY CENTERS IN SEMICONDUCTORS

Grüneis¹

2001

Fluct. Noise Lett.

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Atomic diffusion of impurity centers is investigated as a possible origin of 1/f noise in semiconductors. Following the trace of an individual impurity center, the noise produced at a certain site is calculated; due to diffusion of centers this is an intermittent process. Besides generation-recombination (= g-r) noise, an excess noise is obtained which is attributed to diffusion of impurity centers. This excess noise exhibits 1/f noise and g-r burst noise. 1/f noise is attributed to the return time of a center to the origin; g-r burst noise is the noise produced by centers residing at a certain site. For a n-type strongly extrinsic semiconductor, the Hooge coefficient α of the present model is derived and impact of compensating acceptors or additional doping by shallow centers is investigated. Increasing the concentration of additional shallow centers α is decreased; an increase of concentration of compensating acceptors results in an increase of α. The temperature dependence of the Hooge coefficient α(T) is calculated and is compared with empirical findings.

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“…Integrating the specific heat capacity (38) and (35) shows that the molar energy, E D T ð Þ, increases as T 4 at low temperatures and as T in the high temperature range, whereas the entropy increases as T 3 in the low temperature interval and as 'n T=T D ð Þ in the high temperature region. The molar thermal energy E D T ð Þ and entropy S D T ð Þ illustrate these qualitative expectations, Figure 14.…”

Section: Energy Of Vibrations and The Number Of Phonons As An Examplementioning

confidence: 99%

“…The continuous transfer and exchange of energy between the microstates causes inevitably fluctuations around the thermal equilibrium values of the occupancies. They show up as the many sources of fluctuations and noise in thermal equilibrium, such as generation-recombination noise in semiconductors as an example [34][35][36].…”

Section: The Entropy Of Phonons As Mixing Entropy Of Bosonsmentioning

confidence: 99%

From heat to entropy

Hoffmann

2020

Materialwissenschaft Werkst

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Milestones in the development of thermodynamics are the discovery of the absolute temperature scale and the recognition that differential “heat” is a form of energy given as the product of absolute temperature and differential entropy. Following a new path, the last statement results from a careful analysis of the heat transfer applying the first theorem without reference to the usual cycles in thermodynamics. This confirms also characteristic properties of entropy. In particular, the total entropy can never decrease in a process. In thermal equilibrium, the differential thermal energy is proportional to the differential entropy with the constant of proportionality being the temperature of the heat and entropy. Hence, thermal energy and entropy are transferred simultaneously into the same storage facilities, some of which are mentioned. However, the issue which one is the superior quantity is obsolete. The entropy is maximum for a given amount of exchanged thermal energy and, vice versa, for a given amount of exchanged entropy the concomitant energy is minimum. We calculate the thermal energy and entropy of phonons (as bosons) in oscillators and of electrons (as fermions) in their states of solids and melts as examples from statistical thermodynamics. The thermal energy or heat is the sum of the energies of all bosons and fermions in their elementary states or quantum states according to Bose Einstein and Fermi Dirac statistics in thermal equilibrium minus the total energy in the limit T→0 K. The entropy can be written as mixing entropy of all of these quantum states weighted with their occupancies, in agreement with an earlier publication. Thus, entropy is a logarithmic metrics of the number of all possible variants to distribute the respective total energy over all elementary states in thermal equilibrium.

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Analysis of localized levels in semiconducting CdS from generation–recombination noise spectra

Cited by 22 publications

References 15 publications

Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

1/f NOISE DUE TO ATOMIC DIFFUSION OF IMPURITY CENTERS IN SEMICONDUCTORS

From heat to entropy

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