Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

Sudou, Tomoko; Ohashi, Kazutoshi; Sato, Toshimaro; Ohta, Eiji; Okayasu, Satoru; Sugai, H.

doi:10.1103/physrevb.71.045211

Cited by 2 publications

(1 citation statement)

References 55 publications

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“…3 The occurrence of charge ordered 2 We recall that WC is an electron phase of a sufficiently low density in which electrons minimize their repulsive Coulomb energy and form a crystal-like array. Whereas "direct" experimental evidence is still lacking, indications for WC occurrence were reported for various strongly correlated electron systems [22,23], including TMO [24]. 3 Noting, the Hall voltage could not be detected in our films, being in agreement with expectedly low Hall mobility in the vicinity of MIT [34,35].…”

Section: Exemplifies Current-voltage I (V ) Characteristics Measured supporting

confidence: 51%

Charge ordering in amorphous WOx films

Kopelevich¹,

Silva²,

Rougier³

et al. 2007

Physics Letters A

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Section: Exemplifies Current-voltage I (V ) Characteristics Measured supporting

confidence: 51%

Charge ordering in amorphous WOx films

Kopelevich¹,

Silva²,

Rougier³

et al. 2007

Physics Letters A

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X‐ray diffuse scattering from carbon‐ion‐irradiated diamond

Sugai

Maeta

Matsumoto

et al. 2007

Phys. Status Solidi (c)

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Synthetic single crystal diamonds are irradiated with 100 MeV carbon-ion and characterized by measurements of the X-ray lattice parameter and diffuse scattering (XDS) at room temperature. The lattice parameter increases with the ion fluence. The intensity of XDS diffuses asymmetrically to form a streak along the [-1 0 0] direction parallel to the reciprocal lattice vector. These results suggest that interstitial atoms induced by irradiation aggregate to form dislocation loop on the (1 0 0) plane in the synthetic single crystal diamonds. The results are similar to the XDS of boron-doped single crystal diamond suggesting that boron atoms are likely to form precipitates on the (1 0 0) plane.1 Introduction Today, the development of high-pressure synthesis technique allows to grow large single crystal diamond and also boron-doped semiconductor diamond of single crystal. Diamond has the characteristic properties such as high thermal conductivity, good thermal stability and good chemical stability. Furthermore, the band gap of boron-doped semiconductor diamond (5.5 eV) is wider than that of the other semiconductor materials. Thus, the synthetic semiconductor diamond is potentially one of the best materials for electronic devices in severe environments like high temperature and radiation. We have studied the electrical transport properties of boron-doped synthetic semiconductor diamond of single crystal [1] and characterized natural and synthetic single crystal diamonds by measurements of the Xray integrated scattering intensity, lattice parameter and diffuse scattering [2][3][4].Diamond usually contains nitrogen to some extent, and is divided into two classes [5]. One contains nitrogen atoms (type Ia and Ib) , the other less nitrogen atoms (type IIa and IIb). It is known that the concentration of nitrogen atoms in the natural diamond (Ia) is about 1000 ppm or more , and in the synthetic diamond (Ib) about 100 ppm. High purity synthetic diamond (IIa) contains nitrogen atoms of a few ppm. Boron-doped synthetic diamond (IIb) contains nitrogen atoms of a few ppm and boron atoms of about 100 ppm. It is of great interest to locate nitrogen atoms in diamonds with various nitrogen concentrations. XDS is a powerful method to detect such the location of nitrogen atoms , clustering of atoms and dislocation loops [6,7].In this study, the synthetic single crystal diamonds (Ib) irradiated with 100 MeV carbon-ion were characterized by measurements of the X-ray lattice parameter and XDS at room temperature. The results are compared with those for high purity synthetic diamond of single crystal (IIa) and boron-doped single crystal diamond (IIb) already reported by us [2][3][4].

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Evidence for a hard gap and Wigner lattice in heavily boron-doped synthetic diamond

Cited by 2 publications

References 55 publications

Charge ordering in amorphous WOx films

Charge ordering in amorphous WOx films

X‐ray diffuse scattering from carbon‐ion‐irradiated diamond

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