This paper describes radiation test results of a radiation hard CMOS technology with 1.0 gm minimum geometry features. The radiation goals of this technology are to ensure the MOS devices are functional after 10 Mrad total dose irradiation, are single event upset hardened to less than lE-10 errors per bit-day, are transient upset immune to 1E9 rads/sec and are latch-up free.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.