The dependence of the carrier concentration on the implantation dose and on the temperature was investigated in ion-implanted thin films of Pb1−xSnxTe (0⩽x<0.1). By assuming a twofold defect level in the conduction band we are able to fit the experimental results. With increasing tin content the energy of the defect level shifts towards the conduction-band edge. By extending the results to SnTe a general model for the understanding of the electrical properties of ion-implanted Pb1−xSnxTe (0⩽x⩽1) is suggested.
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