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A study of ion-implanted zinc in GaAs has been made using three annealing techniques: e-beam, graphite strip heating, and furnace annealing in an arsine ambient. The highest hole concentrations, 7–8×1019 cm−3, were obtained using electron-beam annealing. Graphite strip heating and electron-beam annealing were able to electrically activate 100% of the implanted dose. The effect of strain on the activation of the zinc has been demonstrated by comparing chemical-vapor-deposited Si3N4 with reactively evaporated AlN encapsulants.

Articles you may be interested inA transmission electron microscope investigation of the dose dependence of the microstructure of siliconon insulator structures formed by nitrogen implantation of silicon J. Appl. Phys. 69, 3503 (1991); 10.1063/1.348491 Redistribution and electrical activation of implanted arsenic in silicon on insulator substrates formed by oxygen ion implantation A comparison of the thermal redistribution of arsenic, ion implanted into titanium disilicide films formed on single and polycrystalline silicon High quality silicononinsulator structure formed by oxygen implantation and lamp annealing Appl. Phys. Lett. 52, 819 (1988); 10.1063/1.99294 Behavior of dopant diffusion in a silicononinsulator structure formed by highdose oxygen implantation

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