Annealing of zinc-implanted GaAs

Abstract

A study of ion-implanted zinc in GaAs has been made using three annealing techniques: e-beam, graphite strip heating, and furnace annealing in an arsine ambient. The highest hole concentrations, 7–8×1019 cm−3, were obtained using electron-beam annealing. Graphite strip heating and electron-beam annealing were able to electrically activate 100% of the implanted dose. The effect of strain on the activation of the zinc has been demonstrated by comparing chemical-vapor-deposited Si3N4 with reactively evaporated AlN encapsulants.

Growth And Characterization Of Amorphous Ain Thin Films By Reactive Magnetron Sputtering At Low Temperature

“…These results are in reasonable agreement with the reported value of 2.1 for the bulk material. AIN controlled etching can be performed in various mineral acids such as HF/H 2 0 [17], HNO 3 /HF [18] and aqueous NaOH [19] solutions. However, these etchants require high temperature and permit only very low etching rates.…”

Annealing Behavior of GaAs Ion Implanted with p‐Type Dopants

“…Hot wall low pressure CVD has found many applications in semiconductor manufacture in recent years, primarily because of its advantages of high wafer stacking density and uniform device quality film growth (1,3). The additional advantage of process simplification by the introduction of a dopant bearing species directly into a source gas has been a topic of recent interest in LPCVD of polycrystalline films (1)(2)(3)(4)(5)(6). In situ doping eliminates the cost and complexity of postdeposition doping processes.…”

“…Previous studies (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11) on annealing behavior of gallium arsenide (GaAs) wafers ion implanted with p-type dopants such as Be, Mg, Zn, and Cd have generally shown that the diffusive redistribution of the p-type dopants during annealing is quite complex and that this redistribution depends on a number of parameters. Some of these parameters, such as annealing temperature and time, annealing environment, dopant concentration, ion dose, which controls the lattice damage, and the type of GaAs, are well known and easily characterized, while others, such as the role of the encapsulant in case of capped annealing, dislocation density of GaAs, and the rate of temperature rise during the annealing cycle, are not so obvious.…”

“…The review also pointed out that dopant profile and redistribution information about other p-type dopants, namely, Zn, Cd, or Mg, was limited, and reasons for the observed less-than-100% activation efficiency were not understood. Recent studies (3)(4)(5) of annealing of Zn-implanted GaAs encapsulated in silicon nitride show that significant in-diffusion resulted in considerable broadening of the dopant profile compared to the as-implanted profile during annealing at or above 850~ This profile broadening was observed to be as much as three to four times the as-implanted profile, i.e., up to 0.8-1.0 ~m deep into GaAs. Some limited recent investigations (6)(7)(8) of capless rapid thermal annealing (RTA) of Zn-implanted GaAs reported negligible in-* Electrochemical Society Active Member.…”

Wet Chemical Etching Survey Of III-Nitrides

“…Amorphous AIN has been reported to etch in 100°C HF/H,0 [20][21][22], HFiHN0, [23] and NaOH [24], and polycrystalline AIN in hot (< 85°C) H,P04 at rates less than 500~"min-' [25,26]. Mileham et al [27] reported the etching of AIN defective single crystals in KOH based solutions at etch temperatures ranging from 23-80°C.…”