A theoretical and experimental study is made of the piezoresistance of p-and n-type CdSb. The stress applied along the three crystal axes produces a change in the resistivity of opposite sign. The proposed theory of noneyuivalent valley A , A , and 2, which follows from the low symmetry of the crystal, explains the observed effects in n-type CdSb, while a theory involving three nonequivalent shifted valence-maxima in r is in good agreement with the experimental results for p-type CdSb.Der Piezowiderstand von p-und n-CdSb murde theoretisch und experimentell untersucht. Die entlang der drei Kristallaehsen angelegten mechanischen Spannungen erzeugen Widerstandsanderungen mit unterschiedlichem Vorzeichen. Die Ungleichwertigkeit der Taler A, A und Z, die sich aus der niedrigen Symmetrie des Kristalls ergibt, erklart die beobachteten Effekte in n-CdSb, wiihrend eine Theorie von drei gegeneinander verschobenen nicht-Pquivalenten Valenzbandmaxima in r sich in guter Ubereinstimmung mit den experimentellen Ergebnissen in p-CdSb befindet.
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The adiabatic potential in the layer semiconductor GaSe is considered taking into account the Davydov splitting of the bands. It is shown that in the case of electron-phonon interaction which is responsible for the Jahn-Teller pseudoeffect, distortions are possible either normal to layers or along the layers, depending on the parameters of the electron and phonon subsystems.PaccMaTpHsaeTcn aAEla6aTMWCKHB noTeHqHan B CJIOE~CTOM nonynpoBoHHElHe GaSe c yre-roM HasbinoBcnoro pacWenJreHmf OH. I l o~a 3 a~0 , TO B caysae a n e~~p o~-x o n e6aTeJIbHOI' O B3aHMOAeBCTBHfi, OTBeTCTBeHHOrO 38 IICeBnO3@$eKT %Ia-Tennepa, B 3aBIICM-MOCTH OT napaMeTpOB paCCMaTpHBaeM08 CEl CTeMbI B03MOlfEHbI AEl CTOpCMIl am60 BHOJlb HopMam K CJIORM, a2160 B A O~~ cnoeB.
Nuclear magnetic resonance (NNR) peak splitting was observed in PbTe. The additional peak was found to be due to defocts. The observed splitting is explained by the disappearance of the s-component of carrier wave function. Estimates show that a single defect can deform several unit cells. I n PbTe murde eine Aufspalt ung eines Kernresonanzmaximums (NMR) beobaehtet. Es wird gefunden, dal3 das zusatzliche Maximum durch Defekte hervorgerufen wird. Die beobachtete Aufspaltung wird mit dem Verschwinden der s-Komponente der Ladungstragerwellenfunktion erklart. Rechnungen zeigen, da13 ein einzelner Defekt einige Elementarzellen deformieren kann.
A calculation technique based on experimental data is proposed for determining the Dimmock model parameters m i , ,,, g : , P I , 11 of narrow-gap Pbl -&h,Te alloys. From the six-band model, a relation is derived to describe the dependence of the current carrier g-factor on carrier concentration of the alloy composition. The composition dependence of the matrix element of the momentum operator (MOME) P I as derived earlier by the authors is studied over a wide range of compositions x. The analysis of experimental data reveals an anomalous behaviour of P I in the region of band inversion. The dependence P I ( " ) may be approximated by an exponential function. The dependences of effective masses, the g-factor of electrons and holes, as well as mass anisotropy coefficients, on composition and carrier concentration are analyzed on the assumption that P is a function of composition. The results of the analysis are compared with experiment. It is shown that the disagreement between theory and experiment can be substantially reduced by substituting P I ( " ) for P I = const. Relations are given by which the carrier parameters in Pbl-,Sn,Te can be calculated in terms of the Dimmock model. k33nome~a M e T o A m a o n p e Z e n e H m a n a p a M e T p o B M o a e n t i & m o K a m?, ,I ; g : ; P I , 11 HJIH
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